FGB5N60UNDF Discrete Semiconductor Products |
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| Allicdata Part #: | FGB5N60UNDF-ND |
| Manufacturer Part#: |
FGB5N60UNDF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 600V 10A 73.5W D2PAK |
| More Detail: | IGBT NPT 600V 10A 73.5W Surface Mount TO-263AB (D²... |
| DataSheet: |  FGB5N60UNDF Datasheet/PDF |
| Quantity: | 735 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Power - Max: | 73.5W |
| Supplier Device Package: | TO-263AB (D²PAK) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Reverse Recovery Time (trr): | 35ns |
| Test Condition: | 400V, 5A, 10 Ohm, 15V |
| Td (on/off) @ 25°C: | 5.4ns/25.4ns |
| Gate Charge: | 12.1nC |
| Input Type: | Standard |
| Switching Energy: | 80µJ (on), 70µJ (off) |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 5A |
| Current - Collector Pulsed (Icm): | 15A |
| Current - Collector (Ic) (Max): | 10A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | NPT |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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The FGB5N60UNDF is a high-current, high-voltage field-effect power transistor with low-on-resistance. It belongs to the category of transistors known as Insulated Gate Bipolar Transistors (IGBTs). Specifically, the FGB5N60UNDF is a single IGBT, meaning that it consists of a single transistor with an insulated gate, surrounded by a connecting base. This transistor is designed and manufactured by Fairchild Semiconductor, a leading supplier of semiconductor components.
The FGB5N60UNDF is an ideal choice for a variety of applications, including motor controls, UPS applications, switched-mode power supplies, and snubber circuits. This transistor is an excellent choice for use in high-frequency, high-current switching applications due to its high switching speed and low on-state resistance, thereby reducing power losses in the form of heat. Additionally, the FGB5N60UNDF offers excellent long-term reliability since it is constructed using the latest advancements in silicon process technology.
The working principle of the FGB5N60UNDF is quite simple. When a voltage is applied to the gate, a current is induced in the connecting base, which turns the transistor on. This, in turn, creates a low-resistance path between the collector and emitter terminals, allowing a current to flow. When the gate voltage is removed, the transistor switches off, cutting off the current and restoring the high-resistance state.
The FGB5N60UNDF is an excellent choice for a variety of applications requiring high-current, high-voltage switching. Its low on-resistance reduces power losses, while its expanded range of operating voltages and temperatures makes it an ideal choice for a variety of high- frequency, high-current switching applications. Its low-voltage gate drive makes it an ideal choice for UPS applications, and its long-term reliability makes it an excellent choice for motor control and snubber circuits.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FGB5N60UNDF | ON Semicondu... | -- | 735 | IGBT 600V 10A 73.5W D2PAK... |
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