FGB7N60UNDF

Power - Max:	83W
Supplier Device Package:	TO-263AB (D²PAK)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	32.3ns
Test Condition:	400V, 7A, 10 Ohm, 15V
Td (on/off) @ 25°C:	5.9ns/32.3ns
Gate Charge:	18nC
Input Type:	Standard
Switching Energy:	99µJ (on), 104µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 7A
Current - Collector Pulsed (Icm):	21A
Current - Collector (Ic) (Max):	14A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

The FGB7N60UNDF is a innovative Insulated Gate Bipolar Transistor (IGBT) which has been designed to provide reliable switching performance in a wide range of applications. It features a very high-speed switching speed of 25 ns, and a low on-resistance of 18 mΩ, making it an ideal choice for power conversion and switching applications.

Application Fields

The FGB7N60UNDF is suitable for use in a wide range of applications including power electronics, motor drives, solar photovoltaic systems, inductive heating, UPS systems, wind turbines and power supplies.In motor drive applications, the FGB7N60UNDF provides high currents and fast switching times, enabling accurate and efficient operation of motor drive circuits. In addition, it is able to provide high efficiency and power factor operation, allowing it to be used in solar photovoltaic systems, which require power conversion solutions.In inductive heating, the FGB7N60UNDF is suitable for pulse applications, allowing energy to be stored and released efficiently, without the need for high power levels. It provides fast switching times, and low on-resistance, allowing it to efficiently operate high-frequency systems.In UPS systems, the FGB7N60UNDF can provide very fast switching speeds, making it ideal for load switching and power factor correction applications. Moreover, its high current capabilities, and low on-resistance, make it well suited to supplying current to the various loads of the system.Finally, in wind turbines, the FGB7N60UNDF provides quick and efficient switching, which allows the turbine to efficiently power the generator, helping to maximize its efficiency.

Working Principle

The FGB7N60UNDF uses a IGBT technology to switch high speed currents at low voltages. Its high current and low on-resistance capabilities make it well suited for applications such as power conversion, motor drives, and inductive heating.The IGBT works by using a voltage on the gate to control the current flow between the collector and emitter, by creating a conducting channel in between. The width of the channel is determined by the voltage applied to the gate, and when the voltage is increased, the width of the channel increases, allowing more current to flow.When the IGBT is turned off, the voltage applied to the gate is removed, and the channel is closed, preventing current from flowing. The IGBT is able to switch on and off relatively quickly, allowing for precise and efficient control of the current flow.

Conclusion

The FGB7N60UNDF is a innovative IGBT designed for power conversion and switching applications. Its high-speed switching, low on-resistance, and large current capabilities make it an ideal device for applications such as motor drives, inductive heating, UPS systems, solar photovoltaic systems, and wind turbines. By using IGBT technology, the FGB7N60UNDF is able to switch current quickly and efficiently, and is able to perform complex power conversion tasks.

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