Allicdata Part #: | FGH15T120SMD-F155-ND |
Manufacturer Part#: |
FGH15T120SMD-F155 |
Price: | $ 2.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 30A 333W TO247-3 |
More Detail: | IGBT Trench Field Stop 1200V 30A 333W Through Hole... |
DataSheet: | FGH15T120SMD-F155 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 2.71530 |
10 +: | $ 2.43999 |
100 +: | $ 1.99937 |
500 +: | $ 1.70204 |
1000 +: | $ 1.43545 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 30A |
Current - Collector Pulsed (Icm): | 60A |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 15A |
Power - Max: | 333W |
Switching Energy: | 1.15mJ (on), 460µJ (off) |
Input Type: | Standard |
Gate Charge: | 128nC |
Td (on/off) @ 25°C: | 32ns/490ns |
Test Condition: | 600V, 15A, 34 Ohm, 15V |
Reverse Recovery Time (trr): | 72ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 Long Leads |
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FGH15T120SMD-F155 belongs to the field of Transistors - IGBTs - Single. An Insulated Gate Bipolar Transistor (IGBT) is a type of transistor that combines the best of both worlds – a Bipolar Junction Transistor (BJT) and a Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). IGBTs are able to handle large amounts of power, so they\'re commonly used in applications such as motor control and power supplies.
The FGH15T120SMD-F155 is a high-power IGBT transistor, able to handle continuous DC currents of up to 15A. It\'s also rated for pulse currents of up to 120A. The transistor provides excellent electrical properties, including low on-state losses, high switching speeds and a wide safe operating area.
The FGH15T120SMD-F155 has a wide variety of applications and can be used for power control in motor control systems, AC/DC converters, uninterruptible power supplies, industrial process control and robotics, among others. It can also be used in high-power circuit protection, audio amplifiers and other power applications.
The working principle of the FGH15T120SMD-F155 is based on its IGBT technology. Basically, an IGBT is like a combination of a MOSFET and a BJT. The gate is insulated from the channel, so it requires only a low gate-voltage to turn “ON” the transistor and allow current to flow. The current flows from the collector to the emitter, just like with a BJT, resulting in a superior high-power switching capability.
The FGH15T120SMD-F155 also has an integrated bypass diode, helping to control high dv/dt and to increase the life of the device. And thanks to its low on-state losses, it delivers improved efficiency and reduced power dissipation.
In summary, the FGH15T120SMD-F155 is a high-power IGBT transistor with a wide range of applications in motor control, power conversion and audio amplifiers. It uses IGBT technology to provide low on-state losses, fast switching speeds and a wide safe operating area. Its integrated bypass diode helps to protect against high dv/dt and increase its life. The FGH15T120SMD-F155 is thus an ideal product for high-power control and switching applications.
The specific data is subject to PDF, and the above content is for reference
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