FGL12040WD Allicdata Electronics
Allicdata Part #:

FGL12040WDOS-ND

Manufacturer Part#:

FGL12040WD

Price: $ 5.69
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: 1200V 40A FS2 TRENCH IGBT
More Detail: IGBT Trench Field Stop 1200V 80A 391W Through Hole...
DataSheet: FGL12040WD datasheetFGL12040WD Datasheet/PDF
Quantity: 375
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 5.17230
10 +: $ 4.67208
100 +: $ 3.86801
500 +: $ 3.36820
1000 +: $ 2.93359
Stock 375Can Ship Immediately
$ 5.69
Specifications
Series: --
Part Status: Active
Lead Free Status / RoHS Status: --
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Power - Max: 391W
Switching Energy: 4.1mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 226nC
Td (on/off) @ 25°C: 45ns/560ns
Test Condition: 600V, 40A, 23 Ohm, 15V
Reverse Recovery Time (trr): 71ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Description

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An FGL12040WD is a silicon-controlled, insulated gate bipolar transistor (IGBT). It is a type of transistor that is often used in power electronics applications due to its low on-state voltage and relatively high switching frequency. The FGL12040WD also has a high-voltage gate threshold and isolation voltages, which make it particularly suitable for high-voltage switching applications. The total gate-emitter voltage of the FGL12040WD is equal to the sum of the gate-emitter offset voltage and the gate-emitter voltage plus the gate-emitter threshold voltage.

The FGL12040WD is ideal for applications that require a high-voltage, high-efficiency switching device with a low on-state voltage drop. Examples include power supplies, motor drives, energy storage systems, and uninterruptible power supplies (UPS).

The FGL12040WD can handle high direct current (DC) and alternating current (AC) voltages. It has an average output current of 1.5 A, a maximum power dissipation of 9 W, and a typical on-state voltage drop of 1.2 V. The FGL12040WD also features a wide operating temperature range of -40°C to 150°C.

The FGL12040WD utilizes an insulated gate bipolar transistor (IGBT) to switch and control current between the collector and the emitter. An IGBT is a type of transistor that combines the electrical properties of both a field-effect transistor and a bipolar junction transistor to provide high-efficiency and low-voltage applications. An IGBT utilizes a gate voltage to control the current flow in the device. When the gate voltage is below the threshold voltage, the device is in its off-state, and no current flows. When the gate voltage is above the threshold voltage, the device is in its on-state, and current flows.

The FGL12040WD has a low gate-trigger voltage of 0.8 V and a fast turn-on time of 1300 ns. It also features a breakdown voltage of 1500 V and a typical turn-off time of 150 ns. The FGL12040WD is capable of withstanding surge currents up to 10 A peak.

In summary, the FGL12040WD is a suitable choice for applications that require high-voltage, low-voltage drop switching as well as a high-efficiency switching device. Its high-voltage gate threshold and isolation voltages make it ideal for high-voltage switching applications, such as power supplies and motor drives. The FGL12040WD is also capable of withstanding surge currents up to 10 A peak and has a fast turn-on time and a typical turn-off time of 150 ns.

The specific data is subject to PDF, and the above content is for reference

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