FGL35N120FTDTU IGBT 1200V 70A 368W TO264 |
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| Allicdata Part #: | FGL35N120FTDTU-ND |
| Manufacturer Part#: |
FGL35N120FTDTU |
| Price: | $ 6.93 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 1200V 70A 368W TO264 |
| More Detail: | IGBT Trench Field Stop 1200V 70A 368W Through Hole... |
| DataSheet: |  FGL35N120FTDTU Datasheet/PDF |
| Quantity: | 252 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 1 +: | $ 6.30000 |
| 10 +: | $ 5.68890 |
| 100 +: | $ 4.70988 |
| 500 +: | $ 4.10130 |
| Series: | -- |
| Packaging: | Tube |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| Moisture Sensitivity Level (MSL): | -- |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 70A |
| Current - Collector Pulsed (Icm): | 105A |
| Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 35A |
| Power - Max: | 368W |
| Switching Energy: | 2.5mJ (on), 1.7mJ (off) |
| Input Type: | Standard |
| Gate Charge: | 210nC |
| Td (on/off) @ 25°C: | 34ns/172ns |
| Test Condition: | 600V, 35A, 10 Ohm, 15V |
| Reverse Recovery Time (trr): | 337ns |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-264-3, TO-264AA |
| Supplier Device Package: | TO-264 |
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.FGL35N120FTDTU is a single IGBT device made by Fairchild Semiconductor. IGBT stands for insulated gate bipolar transistor, and the device is a type of switching transistor that is well suited for power control applications. It combines the low on-state resistance of an MOSFET (metal-oxide-semiconductor field-effect transistor) with the high current and voltage capability of a bipolar junction transistor. This makes the FGL35N120FTDTU perfect for high-power switching applications.
The FGL35N120FTDTU has a range of applications due to its versatile characteristics. The device has a nominal collect and emitter current of 35A and a total power dissipation of 439W, making it suitable for controlling high currents and voltages without generating high power losses. Additionally, its low gate-emitter voltage (Rg=2.5Ω) allows the device to be used in power switching applications where fast switching is required. Owing to its low gate-source capacitance (Ciss=13pF), the FGL35N120FTDTU is capable of high switching frequencies and frequencies up to 900kHz can be achieved.
The working principle of the FGL35N120FTDTU is quite simple. The device consists of three terminals: an emitter, a collector, and a gate. When a positive voltage is applied to the gate, the transistor enters its on-state and current is allowed to flow from the collector to the emitter (collector-emitter current). This is known as conduction. When the voltage applied to the gate is reversed, the transistor enters its off-state, turning off the current flow. This is known as blocking.
The FGL35N120FTDTU is a versatile device that is suited for fast switching applications due to its low gate-emitter voltage and gate-source capacitance. With its high current and voltage capabilities, the device can be used in numerous power control applications where high currents and voltages need to be quickly switched on and off.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FGL35N120FTDTU | ON Semicondu... | 6.93 $ | 252 | IGBT 1200V 70A 368W TO264... |
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