FGL60N100BNTD

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IGBTs (Insulated Gate Bipolar Transistors) are a type of transistor that combines the advantages of both MOSFETs and bipolar transistors. The FGL60N100BNTD is a single IGBT that offers exceptional performance and reliability at an affordable price.

The FGL60N100BNTD offers an optimized solution to a wide range of applications, such as household appliances, medical applications, power supplies, consumer electronics, automotive applications, LED lighting, and industrial motor control. It is designed to provide a low-on-state voltage drop and superior switching performance for higher efficiency and reliability. This IGBT is also suitable for digital applications such as hard-switching and resonant modes.

The FGL60N100BNTD is a low-cost IGBT with a low saturation voltage and low gate charge. It has a breakdown voltage of 600V and a gate-emitter voltage of 30V. The maximum collector-emitter voltage is 600V, and the continuous collector current can reach 60A. This IGBT has an excellent switching capability, with a short circuit withstand time of 2.4µs and an isolation voltage of 3200Vrms.

The working principle of IGBTs is similar to that of other transistors. The IGBT consists of two junctions, an N-type MOSFET and a PNP Bipolar Junction Transistor (BJT). The N-channel MOSFET is the input terminal, and the PNP BJT is the output terminal. An IGBT works by controlling the flow of electrons and holes between the two junctions. When a positive voltage is applied to the gate terminal, it creates an electric field which allows electrons from the N-type MOSFET to flow through the PNP BJT, thus turning on the IGBT. When a negative voltage is applied to the gate terminal, the electric field dissipates and the IGBT turns off.

The FGL60N100BNTD is a reliable, low-cost IGBT that is suitable for a variety of applications. Its generated field is precise, allowing for precise control of the output current. It also has a low saturation voltage and low gate charge, which improves its switching performance. The FGL60N100BNTD offers superior switching performance, low on-state voltage drop, and high reliability, making it ideal for all types of applications.

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