FGP40N6S2 Allicdata Electronics
Allicdata Part #:

FGP40N6S2-ND

Manufacturer Part#:

FGP40N6S2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 75A 290W TO220AB
More Detail: IGBT 600V 75A 290W Through Hole TO-220AB
DataSheet: FGP40N6S2 datasheetFGP40N6S2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 290W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 390V, 20A, 3 Ohm, 15V
Td (on/off) @ 25°C: 8ns/35ns
Gate Charge: 35nC
Input Type: Standard
Switching Energy: 115µJ (on), 195µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Current - Collector Pulsed (Icm): 180A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The FGP40N6S2 is a surface-mountable IGBT with a current rating of 40 Amp and 653 V collector-emitter break down voltage. It\'s part of the single series of transistors manufactured by Fairchild Semiconductor. The FGP40N6S2 is a low-cost option for powering low-voltage and low-current applications.

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device, mostly used as an electronic switch. It consists of three terminals – the emitter, the collector, and the gate. The operation of the IGBT is similar to that of a MOSFET or a BJT except that the gate region has both P-type and N-type regions. By applying a voltage to the gate terminal, the current between the emitter and the collector can be controlled.

The FGP40N6S2 has a collector-emitter breakdown voltage of 653 V and it can switch up to 40-A current at DC with a reverse voltage of 40V. This makes it suitable for low current, low voltage applications that require an IGBT with maximum collector-emitter and gate-emitter voltages. The device can be used for low-cost power control circuits, power circuits for driving large motors, traction inverters, and industrial converters.

The working principle of an IGBT is based on a three-terminal switching device. When a voltage is applied to the gate terminal of the transistor, it switches on and a current flows between the collector and emitter terminals. The magnitude of the current between the collector and emitter terminals depends on the magnitude of the voltage applied to the gate. When the voltage is zero, the transistor is off and no current flows through the circuit.

The FGP40N6S2 offers high power capability and low on-state losses due to its low-voltage and low-current ratings. It also has a low-noise operation, which makes it suitable for noise-sensitive applications. It has a low-temperature coefficient and fast switching speed, which makes it suitable for high performance and power control circuits.

The FGP40N6S2 IGBT can also be used as a switch in applications such as motor control, power switching, and protection circuits. In a motor control application, the FGP40N6S2 can be used to control the current flowing through the motor by varying the voltage applied to its gate. This allows the motor to be controlled in both directions.

The FGP40N6S2 IGBT is a single-series IGBT from Fairchild Semiconductor. It is a low-current, low-voltage power device with a high current rating and collector-emitter breakdown voltage of 653V. It is suitable for low-cost power control circuits, motor power circuits, traction inverters, and industrial converters. The device has fast switching speed and a low-noise operation, making it suitable for noise-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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