FGY75N60SMD

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A FGY75N60SMD is an Insulated Gate Bipolar Transistor (IGBT) part produced by Fairchild Semiconductor. Part of the 75N60 family, the FGY75N60SMD is a single-die, whic is a type of transistor that consists of two p-n junction separated by a thin layer of insulating material – commonly known as the gate oxide.

The FGY75N60SMD is primarily designed for use in applications such as power electronic systems, motor controls, UPS and solar inverters. It has an exceptionally low on-resicance R_on of only 6.5 mΩ, which helps make it useful for high-frequency buck converters. The device is rated to 600V, with a current rating of 75A for a collector current of 150A peak.

The unique design of the FGY75N60SMD allows it to be used as either an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is a three component device; a metal plate (gate) and two p-n junctions (emitter and collector). The metal plate is the separating dielectric layer, while the two p-n junctions form the semiconductor devices.

The metal plate is also connected to a voltage source, which is applied to the gate during operation. When a current is passed through the device, this voltage maintains the gate voltage and facilitates the switching of the device. This on/off operation is essential for IGBTs and MOSFETs.

When the FGY75N60SMD is in the off state, the gate is held at the same potential as the emitter and collector, keeping the device off. However, when the voltage is applied to the gate, it generates a voltage between the gate and the emitter, which injects electrons into the collector. This process is called minority carrier injection or hole injection, which means that electrons in the channel are collected by the collector. This condition is called the on-state.

In the on-state, the collector current is able to flow, and the low resistance of the FGY75N60SMD means that the current can be switched with very low losses. This makes the FGY75N60SMD a very efficient device for power conversion applications, as well as for high-frequency converters.

The FGY75N60SMD is also very reliable and the built-in protection of the device helps to prevent it from over-heating, short-circuiting or otherwise failing to function properly. The device can also operate in harsh environments, so it can be used in a range of applications.

The FGY75N60SMD is a great example of an Insulated Gate Bipolar Transistor (IGBT). It has many advantages over traditional IGBTs, such as low on-resistance, high efficiency and reliability. These features make the FGY75N60SMD a great choice for use in power electronic systems, motor controls, UPS and solar inverters.

The specific data is subject to PDF, and the above content is for reference