FH102A-TR-E Allicdata Electronics
Allicdata Part #:

FH102A-TR-E-ND

Manufacturer Part#:

FH102A-TR-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DUAL 10V 70MA MCP6
More Detail: RF Transistor 2 NPN (Dual) 10V 70mA 7GHz 500mW Sur...
DataSheet: FH102A-TR-E datasheetFH102A-TR-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-MCP
Description

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The FH102A-TR-E is an amplifier transistor manufactured by FUJI, intended for radio-frequency (RF) applications within the broadcast, TV, and communications industries. This article will discuss the applications for the FH102A-TR-E as well as its working principle.

As a bi-polar junction transistor (BJT), the FH102A-TR-E is typically used in amplifying circuits. It is well-suited for high-frequency RF broadcasting applications, due to its high power output, high current gain, and good linearity. It is also used in various other RF applications, such as RF attenuators, low-noise amplifiers, oscillators, and tuned circuits.

The FH102A-TR-E can be used in a variety of commercial and industrial applications, such as Amateur and Marine Radio, TV and Radio Broadcast, Cellular Phone, and Cable Radio and TV. It can also be used in Industrial Communications and Aerospace Equipment. Its robust design and reputation for reliability makes it an excellent choice for use in RF amplifiers.

The transistor consists of two components: the collector, and the emitter. The collector and the emitter are both made of n-type (or negative) material, and the base is made of a thin p-type (positive) layer. When current passes through the collector to the emitter, electrons are attracted to the p-type base layer. This causes current to flow from the collector to the emitter. The amplifier stage of the FH102A-TR-E works by allowing a large current to flow from the collector to the emitter, and the feedback stage works by allowing a small current to flow from the emitter to the collector.

The amplifier is the most crucial component in an RF circuit. It can be used to increase, decrease, filter, and amplify signals. The FH102A-TR-E is an excellent choice for RF amplification due to its wide bandwidth and linearity. Its wide bandwidth allows it to amplify a wide range of frequencies, and its linearity contributes to a clean and balanced sound.

The FH102A-TR-E also has a wide collector-emitter resistance range. This range is important for tuning a circuit to accurately amplify different frequencies without introducing distortion. This range also means that the FH102A-TR-E is suitable for use in both low and high power applications.

The FH102A-TR-E is an ideal component for use in commercial and industrial RF applications. It is perfect for applications such as Amateur and Marine Radio, TV and Radio Broadcast, Cellular Phone, and Cable Radio and TV. Its wide bandwidth, linearity, collector-emitter resistance range, and robust design make it a reliable component.

In summary, the FH102A-TR-E is a transistor designed for radio-frequency applications in the broadcast, TV, and communications industries. Its wide bandwidth, high current gain, and excellent linearity make it an ideal component for use in RF amplifiers, attenuators, oscillators, and tuned circuits. Its wide collector-emitter resistance range also makes it suitable for use in both low and high power applications. Its reliability and robust design make it a reliable and dependable component for use in commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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