FID35-06C

Switching Energy:	1.1mJ (on), 600µJ (off)
Supplier Device Package:	ISOPLUS i4-PAC™
Package / Case:	i4-Pac™-5
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	50ns
Test Condition:	300V, 25A, 10 Ohm, 15V
Td (on/off) @ 25°C:	--
Gate Charge:	140nC
Input Type:	Standard
Series:	--
Power - Max:	125W
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 25A
Current - Collector (Ic) (Max):	38A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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The FID35-06C is a type of transistor known as an Insulated Gate Bipolar Transistor (IGBT). This type of transistor is unique because it combines the features of both a bipolar junction transistor and a metal-oxide-semiconductor field-effect transistor (MOSFET). It has a high switching speed and low conduction losses, making it an effective choice for applications requiring fast switching, such as in power supplies, motor drives, and smoking detectors.The working principle of the FID35-06C is based on the MOSFET structure and IGBT technology. An IGBT is basically a MOSFET with an additional layer between the source and drain electrodes. This layer is the gate insulating layer and it increases the voltage blocking capability of the device.The FID35-06C transistor works by first allowing an electric current to flow through the source to the drain when a low voltage is applied to the gate. When the voltage at the gate is increased, the IGBT device enhances the current flow. This in turn increases the voltage drop across the device, which makes the FID35-06C transistor a great choice for switching applications requiring fast switching, high current loads, and low losses.The FID35-06C is used in many applications such as power supplies, motor drives, switching AC loads, inverters, and more. It is also a popular choice for power electronics applications due to its fast switching speed and low conduction losses. This particular IGBT device has a rated current, or forward conduction current, of 60A and a rated voltage, or reverse blocking voltage, of 600Volts. Its gate-emitter capacitance is very low (CGE=3.2nF), making it suitable for applications requiring very low switching noise.To sum up, the FID35-06C is a type of transistor used in many switching and power electronics applications due to its fast switching speed and low conduction losses. Its gate-emitter capacitance is very low, making it suitable for applications requiring very low switching noise. It is a popular choice for many applications including AC loads, power supplies, motor drives, and inverters.

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