FM16W08-SG

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1. Features

    1. 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8

        - High-endurance 100 trillion (1014) read/writes

        - 151-year data retention (see the Data Retention and Endurance table)

        - NoDelay™ writes

        - Advanced high-reliability ferroelectric process

    2. SRAM and EEPROM compatible

        - Industry-standard 8 K × 8 SRAM and EEPROM pinout

        - 70-ns access time, 130-ns cycle time

    3. Superior to battery-backed SRAM modules

        - No battery concerns

        - Monolithic reliability

        - True surface mount solution, no rework steps

        - Superior for moisture, shock, and vibration

        - Resistant to negative voltage undershoots

    4. Low power consumption

        - Active current 12 mA (max)

        - Standby current 20 A (typ)

    5. Wide voltage operation: VDD = 2.7 V to 5.5 V

    6. Industrial temperature: –40 C to +85 C

    7. 28-pin small outline integrated circuit (SOIC) package

    8. Restriction of hazardous substances (RoHS) compliant

2. Pin configuration

3. Pin Description

4. Application Information

These devices are designed to operate over an input voltage range of 2.3 V to 5.5 V, with The maximum output current is 2.1 A. The device operates in PWM mode for moderate to heavy load conditions and is Power saving mode at light load currents. In PWM mode, TPS6123x converters operate at nominal The switching frequency is 2 MHz, providing controlled frequency variation over the input voltage range. as The load current decreases, the converter enters a power saving mode, reducing the switching frequency and Minimize IC quiescent current for high efficiency over the entire load current range. WEBENCH software uses an iterative design procedure and accesses a comprehensive component database to generate designs under the following conditions.

5. Device Operation

The FM16W08 is a bytewide F-RAM memory logically organized as 8,192 × 8 and accessed using an industry-standard parallel interface. All data written to the part is immediately nonvolatile with no delay. Functional operation of the F-RAM memory is the same as SRAM type devices, except the FM16W08 requires a falling edge of CE to start each memory cycle. See the Functional Truth Table on page 13 for a complete description of read and write modes.