FM27C512Q120 Allicdata Electronics
Allicdata Part #:

FM27C512Q120-ND

Manufacturer Part#:

FM27C512Q120

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC EPROM 512K PARALLEL 28CDIP
More Detail: EPROM - UV Memory IC 512Kb (64K x 8) Parallel 120...
DataSheet: FM27C512Q120 datasheetFM27C512Q120 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - UV
Memory Size: 512Kb (64K x 8)
Write Cycle Time - Word, Page: --
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm) Window
Supplier Device Package: 28-CDIP
Base Part Number: FM27C512
Description

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Memory plays an essential role in today’s digital age, being the most important factor when it comes to the speed, performance, and reliability of a computer system. The memory in a computer system is classified according to the type of data stored, use, and cost. One of the most important types of memory is the Static Random Access Memory (SRAM). FM27C512Q120, a 4k-bit SRAM based on advanced CMOS technology, is a reliable high-performance application for memory applications.

FM27C512Q120 Application Fields

The FM27C512Q120 is suitable for many memory applications, especially those that require fast random access. The most common application fields for FM27C512Q120 are embedded systems, industrial automation, avionics and aerospace, telecommunications, automobiles, medical, multimedia, networking and communicationsFM27C512Q120 has the advantages of low power consumption and fast access speed. This type of SRAM can be used in embedded systems that are required to operate on low power and perform operations quickly. The FM27C512Q120 also is suitable for applications with strict low power requirements, such as automotive and medical. It also is suitable for applications involving multimedia and networking, as it can transmit data at a high speed.

FM27C512Q120 Working Principle

The FM27C512Q120 is based on Static RAM technology. It comprises of a set of memory cells which can store one bit of information. A memory cell is composed of three transistors and two capacitors. The transistors act as the data switches and the capacitors store the charge and hence the binary information. This is the standard structure used in all Static RAMs.

Data can be written to the memory cells through the use of appropriate chip select lines, write enable lines and address lines. Once the data is in the cell, it can be read. During a read operation, the memory cell sends its content onto the data lines and this is read by the microprocessor. The operation is performed at very high speeds.

The FM27C512Q120 integrates several advanced features such as a read burst length of 16 words, an auto-precharge, and a write cycle time of 250 ns. It is also available in a range of package types, such as the TSOP, SSOP, and so on. The suitability and flexibility of the FM27C512Q120 makes it a perfect choice for memory applications.

Conclusion

The FM27C512Q120 is an advanced SRAM integrated into today’s most advanced technology. It has a low power consumption and fast access speed, making it an ideal memory solution for embedded systems and other applications. The FM27C512Q120 is also suitable for numerous applications, such as industrial automation, avionics and aerospace, automobiles, medical, and multimedia. With its flexibility and reliability, the FM27C512Q120 is a cost-effective solution for any type of memory application.

The specific data is subject to PDF, and the above content is for reference

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