FM28V100-TG Allicdata Electronics
Allicdata Part #:

428-3551-ND

Manufacturer Part#:

FM28V100-TG

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FRAM 1M PARALLEL 32TSOP I
More Detail: FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) ...
DataSheet: FM28V100-TG datasheetFM28V100-TG Datasheet/PDF
Quantity: 143
Stock 143Can Ship Immediately
Specifications
Series: F-RAM™
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-TSOP I
Base Part Number: FM28V100
Description

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The FM28V100-TG is a state-of-the-art Static RAM (SRAM) device. This type of memory is used in a variety of applications, ranging from embedded systems to industrial computing. It is a non-volatile memory, meaning that once its data has been written, it retains that information until it is manually cleared or reset.

The FM28V100-TG is a 32-bit wide, four-bank SRAM that operates at a clock speed of up to 68 MHz. It has an operating voltage range of 3V to 3.6V and has a low current consumption of less than 250µA. The device has an access time of 25 ns and can store up to 16 Mbits of memory.

The FM28V100-TG has a wide range of applications in industrial and embedded systems. In industrial systems, the SRAM is used for storing configuration data, program code and data logs. Additionally, it can be used as a buffer between two processors, allowing them to communicate with each other and facilitating communications and data transfers.

In embedded systems, the SRAM is used for storing and executing application software and code. Additionally, it can be used to store data in a non-volatile format. This can be very useful in situations where data needs to be stored for long periods of time without worrying about losing it due to power outages or system crashes.

The FM28V100-TG is based upon the 3-transistor (3T) cell architecture, which is an improvement over the conventional 6-transistor SRAM cells. This architecture results in improved performance while consuming less power. The device is also designed with a built-in self-refresh function, which reduces power consumption during idle periods and ensures data integrity.

The FM28V100-TG is compatible with a variety of common bus protocols for data transfers and communications, including JTAG, I2C and SPI, which enables it to communicate with a wide range of electronic systems. It also integrates an ECC (Error Checking & Correction) function that ensures data integrity and helps to prevent data corruption.

The FM28V100-TG is a reliable and economical SRAM device that can be used for a variety of applications. Its high performance, low power consumption and error-correction capabilities make it an ideal solution for many industrial and embedded applications.

The specific data is subject to PDF, and the above content is for reference

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