FM33256B-GTR

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FM33256B-GTR is a specialty IC. It is mainly used in Flash Memory systems as a low voltage static random access memory (SRAM). The unique factor about FM33256B-GTR is its ability to work at a low voltage of 1.35V. It also has an advanced internal architecture which makes it ideal for applications requiring fast read and write operations.

The FM33256B-GTR integrates 2536Kbits of memory organized in 178Kwords x 16bits. It uses five control signals to identify the address of data being read or written. These signals are A[14:0], CS#, WRITE#, READ#, and OE#. This IC also has output pins for data (during read operation), and for writing data into the memory (during write operation). The IC has separate data and address buses which reduce the signal degradation.

The FM33256B-GTR also has high transfer rate which makes it ideal for applications requiring fast read and write operations. It has maximum transfer rate of 183MHz and a typical latency of 3 bus cycles. This IC also has a fairly low standby power consumption of 10nA and is available in an ultra-small 8Pin UDFN package.

The FM33256B-GTR uses a method called ‘NAND Flash Bus width Mapping’ which enables it to interface with NAND Flash Bus. This feature helps reduce system complexity and cost as NAND Flash Bus is used in a variety of memory system applications Both read and write operations for the FM33256B-GTR are simple and data can be accessed by just supplying the address information.

FM33256B-GTR can be used in a variety of memory systems applications, such as embedded flash memory, mobile devices and data storage systems. It is particularly useful in applications that require low voltage operations, fast read and write operations, and low power consumption. This makes the FM33256B-GTR an excellent choice for applications where power and size are both limited.

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