FMG1G100US60L Allicdata Electronics
Allicdata Part #:

FMG1G100US60L-ND

Manufacturer Part#:

FMG1G100US60L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT MOLDING 600V 100A 7PM-GA
More Detail: IGBT Module Single 600V 100A 400W Chassis Mount 7...
DataSheet: FMG1G100US60L datasheetFMG1G100US60L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Power - Max: 400W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 10.84nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 7PM-GA
Supplier Device Package: 7PM-GA
Description

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In today\'s technological world, IGBTs (Insulated Gate Bipolar Transistors) are becoming increasingly popular components. They are well known for their wide range of applications and they offer excellent performance in terms of power offering, switching speed and low operating temperature. The FMG1G100US60L IGBT module is one such product that is gaining popularity in the electronic market. It is a cost-effective solution that provides great performance and reliability in industrial applications.

The FMG1G100US60L IGBT module is primarily used for the motor drive and industrial automation systems. It offers excellent electrical performance during operation, which ensures reliable operation of the system. Additionally, it provides protection from voltage and current surges that could otherwise damage the system components. This module also features fast switching speed and low switching loss, making it ideal for the applications that require high-frequency switching.

The FMG1G100US60L IGBT module is designed with an insulated gate structure. This structure ensures superior electrical characteristics such as low on-state voltage, high switching speed, easy driving and low temperature rise. The IGBT also includes two independent dielectric films, which offer enhanced holding current and a high breakdown voltage. Furthermore, the module incorporates a built-in over-temperature protection circuit, which prevents physical damage to the module in case of excessive current or temperature.

In terms of working principle, the FMG1G100US60L IGBT module is equipped with two insulated gate transistor dielectrics. The positive gate terminal is connected to the collector and the negative gate terminal is connected to the emitter. When these terminals have the same voltage, then the transistor is in the OFF state. When the negative gate voltage is higher than the positive gate voltage, the transistor is in the ON state, meaning the current will flow between the collector and the emitter.

In conclusion, the FMG1G100US60L IGBT module is a great option for various industrial applications. It features excellent electrical performance, fast switching speed, robust construction and superior protection against voltage and current surges. By incorporating the insulated gate structure, the module is able to provide superior performance, switching loss and temperature rise, making it an excellent choice for all kinds of applications.

The specific data is subject to PDF, and the above content is for reference

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