FMS6G20US60 Allicdata Electronics
Allicdata Part #:

FMS6G20US60-ND

Manufacturer Part#:

FMS6G20US60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 20A 25PM-AA
More Detail: IGBT Module Three Phase Inverter 600V 20A 89W Cha...
DataSheet: FMS6G20US60 datasheetFMS6G20US60 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Power - Max: 89W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.277nF @ 30V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 25PM-AA
Supplier Device Package: 25PM-AA
Description

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FMS6G20US60 Application Field and Working Principle
Introduction: FMS6G20US60 is an Insulated Gate Bipolar Transistor (IGBT) module. This module has various features and reduces size, weight and production costs compared to previous versions. It is suitable for a wide range of applications including motor control, power conversion, DC-DC converter and power factor correction. This article discusses the application field and working principle of FMS6G20US60.
Application Field: FMS6G20US60 is suitable for different application fields. In particular, its robust construction and improved resistance to short-circuit currents make it suitable for use in motor control. Its high frequency performance makes it suitable for variable frequency control applications such as variable speed drive control and AC motor control. It is also suitable for DC to DC converter and power factor correction applications.Working Principle: FMS6G20US60 works on the principle of Insulated Gate Bipolar Transistors (IGBTs). An IGBT is a three-terminal device consisting of two p-n junction diodes connected back-to-back with a thin gate oxide layer between them. The gate oxide layer provides electrical insulation between the two p-n junctions. The gate oxide layer is typically made of silicon dioxide which works as an electrical insulator. When a voltage is applied to the gate electrode, the electrical field created by the gate voltage modifies the current path of the device by modulating the conductance of the p-n junctions.In an IGBT module like FMS6G20US60, the two n-type and two p-type IGBTs are mounted together on a common substrate and the gate electrodes are connected to one another. When a gate voltage is applied, both n and p-type IGBTs are simultaneously triggered, creating a series connection of IGBTs and allowing current to flow from collector to emitter. The IGBTs are connected in anti-parallel configuration, meaning that the two n-type and two p-type IGBTs are connected in opposite direction with respect to one another. The FMS6G20US60 module also contains diode components and a built-in resistor to protect the module from high current conditions and enable fast switching. The diode components in the module conduct current in reverse direction when the p-type and the n-type IGBTs are turned off, thus allowing fast switching and protection from high current. The built-in resistors in the module also protect the module from any kind of reverse current flux. In conclusion, FMS6G20US60 is a robust, reliable and efficient IGBT module suitable for various application fields such as motor control, DC-DC converters and power factor correction. It works on the principle of Insulated Gate Bipolar Transistors (IGBTs) and contains diode components and built-in resistors for protection and fast switching.

The specific data is subject to PDF, and the above content is for reference

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