Allicdata Part #: | FP20R06W1E3BOMA1-ND |
Manufacturer Part#: |
FP20R06W1E3BOMA1 |
Price: | $ 24.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 600V 20A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP20R06W1E3BOMA1 Datasheet/PDF |
Quantity: | 32 |
1 +: | $ 21.95550 |
10 +: | $ 20.24760 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 27A |
Power - Max: | 94W |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 20A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 1.1nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FP20R06W1E3BOMA1 is an insulated gate bipolar transistor (IGBT) module designed to improve performance of Lithium-ion (Li-ion) battery systems and other power transmission equipment. This module offers exceptional power density and efficiency, along with low EMI levels and high reliability for applications where IGBT power needs to be transmitted with minimal losses. The product is available in either single or dual module versions with a nominal current rating of 20 Amps at 60V and a typical on-state voltage of 650V.
The IGBT module utilizes a three-level or multi-level structure and anti-parallel switches which effectively reduce the electrical noise, losses and EMI produced from the module. This type of IGBT module offers improved power density and efficiency over traditional two-level modules and is ideally suited for power transmission applications such as large-scale Lithium-Ion battery systems.
The FP20R06W1E3BOMA1 IGBT module works by using a gate drive to control switching of the power transistors. This gate drive is driven by the IGBT\'s control circuit and is operated by a pulse-width-modulated control signal. When the control signal is low, the gate charge is applied to the gates of the power transistors, allowing current to flow through the load. When the control signal is high, the gate charge is removed, preventing current flow and switching off the IGBT.
The IGBT module also has a built-in protection circuit as well as thermal protection, which are used to increase the life and reliability of the module. The protection circuit monitors for overtemperature and overcurrent conditions, and will shut down the IGBT if either of these conditions are exceeded.
This IGBT module is designed for use in a variety of power transmission systems including power converters, renewable energy systems, electric vehicle systems, and other applications where reliable, high-efficiency power transmission is necessary. The module is suitable for a wide range of power levels from 40 to 500 watts, and the excellent temperature range allows operation from -40 to +125 C, making it suitable for use in a variety of challenging environments. The FP20R06W1E3BOMA1 IGBT module is also very robust, with an expected lifespan of over 20 years and a maximum switch-off voltage of 1.5 times rated voltage.
The FP20R06W1E3BOMA1 IGBT module offers excellent power efficiency, low EMI and high reliability, making it an ideal choice for power transmission applications. With its high efficiency and low EMI levels, the module is an excellent choice for applications requiring reliable power transmission with minimum losses and energy savings. The robustness and long expected lifespan of this module make it an ideal choice for a variety of applications, from power converters to renewable energy to electric and hybrid vehicles.
The specific data is subject to PDF, and the above content is for reference
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