FPNH10 Allicdata Electronics
Allicdata Part #:

FPNH10-ND

Manufacturer Part#:

FPNH10

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANSISTOR RF NPN 25V 50MA TO-92
More Detail: RF Transistor NPN 25V 50mA 650MHz 350mW Through Ho...
DataSheet: FPNH10 datasheetFPNH10 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): --
Gain: --
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

In today’s world, an increasing number of electronic devices depend on transistors for proper operation. Bipolar junction transistors, referred to as BJTs, are one of the essential components used in many electronic systems. The most common BJT is the FPNH10, which is used to amplify, switch and even oscillate signals in many different types of application areas. In this article, we will explore the various application fields and working principles of the FPNH10 bipolar junction transistor.

Overview

Bipolar junction transistors are current-controlled devices, meaning they are used to amplify as well as switch current signals between two nodes across three regions. A BJT is composed of a base region and an emitter region, both of which are bounded by an external base connection. The base region must be forward biased and the emitter region reverse biased in order for current to be passed between the two terminals. In a typical structure, the collector region lies between the base and emitter regions, although certain structures may have multiple emitters.

The FPNH10 is a type of low power, high frequency bipolar junction transistor that can be used for a variety of applications. It has a maximum collector current rating of 2A and a small junction capacitance of only 1.5pF. The FPNH10 also features low noise and low distortion thanks to its internally integrated noise and distortion reduction circuitry.

Application Fields

The FPNH10 can be used in a wide range of applications including RF, audio and video amplifiers, oscillators, switching and control circuits, HF tracking loops and regenerative feedback circuitry. In RF applications, the FPNH10 can be used for amplifying and switching frequencies up to and beyond 600MHz. Its wide frequency response and low noise figure makes it an attractive choice for many RF amplification applications. This device can be used to build low power and high fidelity audio amplifiers, and its small junction capacitance makes it suitable for use in high performance circuits.

The FPNH10 can be used as an oscillator, since it has a low power consumption and is capable of switching at high frequencies. It can also be used in switching and control circuits, especially in applications that require high switching speeds or sensitivity. Finally, the FPNH10 is also suitable for use in HF tracking loops and regenerative feedback circuitry, thanks to its wide frequency response and low noise characteristics.

Working Principle

The FPNH10 operates on a simple principle. When current is applied to the base, it produces a small amount of current in the emitter. This increase in current causes a voltage drop across the collector junction which, in turn, causes a more significant current to flow between the collector and the emitter. This increase in current results in an amplified voltage in the collector. This is the basis of the BJT’s amplification process.

When used as a switching element, the BJT turns on when the voltage applied to the base exceeds a certain threshold. This is due to the fact that the increased current in the emitter allows a higher voltage to flow between the collector and the emitter. When used as an oscillator, the FPNH10 functions as an amplifier and an oscillator, which is enabled by the BJT’s ability to amplify signals at high frequencies.

Conclusion

The FPNH10 is a low power and high frequency bipolar junction transistor that can be used for a variety of applications. It is suitable for use in audio and video amplification, high frequency tracking loops and regenerative feedback circuits, and its wide frequency response and low noise characteristics make it an ideal choice for many RF applications. Its working principle is based on the simple fact that the increase in current in the emitter of the transistor causes an amplified voltage in the collector.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FPNH" Included word is 1
Part Number Manufacturer Price Quantity Description
FPNH10 ON Semicondu... 0.0 $ 1000 TRANSISTOR RF NPN 25V 50M...
Latest Products
BFR94AW,115

TRANS NPN 5GHZ SOT323RF Transistor NPN 1...

BFR94AW,115 Allicdata Electronics
BFR93AW,135

TRANS NPN 12V 35MA 5GHZ SOT323RF Transis...

BFR93AW,135 Allicdata Electronics
BFU725F,115

TRANS NPN 20GHZ SOT343FRF Transistor NPN...

BFU725F,115 Allicdata Electronics
MBC13900NT1

TRANS RF NPN LO NOISE SOT-343RF Transist...

MBC13900NT1 Allicdata Electronics
BLS3135-65,114

TRANSISTOR RF POWER SOT422ARF Transistor...

BLS3135-65,114 Allicdata Electronics
BLS3135-50,114

TRANSISTOR RF POWER SOT422ARF Transistor...

BLS3135-50,114 Allicdata Electronics