
Allicdata Part #: | FPNH10-ND |
Manufacturer Part#: |
FPNH10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR RF NPN 25V 50MA TO-92 |
More Detail: | RF Transistor NPN 25V 50mA 650MHz 350mW Through Ho... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Frequency - Transition: | 650MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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In today’s world, an increasing number of electronic devices depend on transistors for proper operation. Bipolar junction transistors, referred to as BJTs, are one of the essential components used in many electronic systems. The most common BJT is the FPNH10, which is used to amplify, switch and even oscillate signals in many different types of application areas. In this article, we will explore the various application fields and working principles of the FPNH10 bipolar junction transistor.
Overview
Bipolar junction transistors are current-controlled devices, meaning they are used to amplify as well as switch current signals between two nodes across three regions. A BJT is composed of a base region and an emitter region, both of which are bounded by an external base connection. The base region must be forward biased and the emitter region reverse biased in order for current to be passed between the two terminals. In a typical structure, the collector region lies between the base and emitter regions, although certain structures may have multiple emitters.
The FPNH10 is a type of low power, high frequency bipolar junction transistor that can be used for a variety of applications. It has a maximum collector current rating of 2A and a small junction capacitance of only 1.5pF. The FPNH10 also features low noise and low distortion thanks to its internally integrated noise and distortion reduction circuitry.
Application Fields
The FPNH10 can be used in a wide range of applications including RF, audio and video amplifiers, oscillators, switching and control circuits, HF tracking loops and regenerative feedback circuitry. In RF applications, the FPNH10 can be used for amplifying and switching frequencies up to and beyond 600MHz. Its wide frequency response and low noise figure makes it an attractive choice for many RF amplification applications. This device can be used to build low power and high fidelity audio amplifiers, and its small junction capacitance makes it suitable for use in high performance circuits.
The FPNH10 can be used as an oscillator, since it has a low power consumption and is capable of switching at high frequencies. It can also be used in switching and control circuits, especially in applications that require high switching speeds or sensitivity. Finally, the FPNH10 is also suitable for use in HF tracking loops and regenerative feedback circuitry, thanks to its wide frequency response and low noise characteristics.
Working Principle
The FPNH10 operates on a simple principle. When current is applied to the base, it produces a small amount of current in the emitter. This increase in current causes a voltage drop across the collector junction which, in turn, causes a more significant current to flow between the collector and the emitter. This increase in current results in an amplified voltage in the collector. This is the basis of the BJT’s amplification process.
When used as a switching element, the BJT turns on when the voltage applied to the base exceeds a certain threshold. This is due to the fact that the increased current in the emitter allows a higher voltage to flow between the collector and the emitter. When used as an oscillator, the FPNH10 functions as an amplifier and an oscillator, which is enabled by the BJT’s ability to amplify signals at high frequencies.
Conclusion
The FPNH10 is a low power and high frequency bipolar junction transistor that can be used for a variety of applications. It is suitable for use in audio and video amplification, high frequency tracking loops and regenerative feedback circuits, and its wide frequency response and low noise characteristics make it an ideal choice for many RF applications. Its working principle is based on the simple fact that the increase in current in the emitter of the transistor causes an amplified voltage in the collector.
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