FS400R07A3E3BOMA1 Allicdata Electronics
Allicdata Part #:

FS400R07A3E3BOMA1-ND

Manufacturer Part#:

FS400R07A3E3BOMA1

Price: $ 262.99
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULES
More Detail: IGBT Module
DataSheet: FS400R07A3E3BOMA1 datasheetFS400R07A3E3BOMA1 Datasheet/PDF
Quantity: 1000
16 +: $ 239.07700
Stock 1000Can Ship Immediately
$ 262.99
Specifications
Series: *
Part Status: Active
Description

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The FS400R07A3E3BOMA1 is an IGBT module from Mitsubishi Electric, specialized in the application field of Power Modules. It is a 600V class IGBT module with a total of 10 type power modules all packaged as a single module. The package type is DIP-8. This module is widely used in areas involving high power, including railway locomotives, welders, motor control, and UPS systems.

An IGBT (Insulated Gate Bipolar Transistor) module is an integrated power semiconductor device. It is composed of two major parts, an upper FET and a lower bipolar transistor. The FET is used to shut on or off the module. The bipolar transistor amplifies current by forming a voltage gain or a current gain depending on its current state. When the FET is activated, the IGBT becomes an effective high-total-current component, enabling high utilization of current resources. The IGBT module can switch and control a large current by using a small current, effectively avoiding heat generation and eliminating energy loss.

The FS400R07A3E3BOMA1 IGBT module is equipped with an intelligent protection circuit that can protect the device from over voltage, over current, over temperature and short circuit damage. In addition, built-in temperature sensors continuously monitor the temperature of the module and automatically adjust the operating temperature. The over temperature protection mechanism helps prevent the module from overheating and damaging other components in the system, as well as prolonging its lifespan.

The FS400R07A3E3BOMA1 IGBT module works by firstly, controlling the conductive gate of the FET. This will directly affect the electric current flowing through the transistor, allowing it to control the current. The current generated is then used to form a voltage gain or a current gain depending on the state of the transistor itself. When overvoltage or higher voltage is detected, the protection circuit will cut off the corresponding circuits and avoid further damage.

The FS400R07A3E3BOMA1 IGBT module is an efficient and reliable device used in applications involving high power. It is compact and energy saving, with a low switching loss that increases the efficiency of the system it is used in. The in-built protection circuit prevents the device from damage from electrical and thermal overloads. Its high total current capacity allows it to effectively control and switch a large current by utilizing a small current.

The specific data is subject to PDF, and the above content is for reference

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