Allicdata Part #: | FS450R12KE3BOSA1-ND |
Manufacturer Part#: |
FS450R12KE3BOSA1 |
Price: | $ 404.94 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1200V 450A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS450R12KE3BOSA1 Datasheet/PDF |
Quantity: | 16 |
1 +: | $ 368.12200 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 600A |
Power - Max: | 2100W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 450A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 32nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors - IGBTs - Modules
The FS450R12KE3BOSA1 is a module used in power electronics. It is an insulated gate bipolar transistor (IGBT) which is a type of power semiconductor. It is used to control and switch electric currents. An IGBT is used in many applications such as motor drives, power supplies and UPS systems.
A single module consists of various components such as diodes, resistors and capacitors. When all of these components are arranged in a single package they form a power module. An IGBT module is designed to handle higher power levels by dissipating heat and dissipating the energy it receives, usually through a heat sink. The module can be mounted and connected to the source of power, usually a power supply.
The FS450R12KE3BOSA1 module is used in a wide range of applications where power is needed for higher voltage and current levels. It is capable of handling up to 1200V and 20A of current. It is used in wide range of different applications from automotive applications such as power window openers to industrial applications such as elevators and robotics.
The working principle of the FS450R12KE3BOSA1 is based on the use of an insulated gate bipolar transistor, which is a combination of two power switching devices. The two components are connected in series with the base of one device connected to the emitter of the other. The gate of the first device, known as the N-channel IGBT, is connected to the first device while the gate of the second device, known as the P-channel IGBT, is connected to the second device. The N-channel IGBT acts as a switch that controls the flow of current when it is switched on whereas the P-channel IGBT controls the current flow in the opposite direction. When current is applied to the gate of each IGBT, the current will flow in the appropriate direction.
The working principle of the FS450R12KE3BOSA1 can be explained further. When the gate of the N-channel IGBT is switched on, current will flow through the device in the forward direction. This current will then be blocked by the P-channel IGBT and the current will flow in the opposite direction which will cause the device to switch off. This process can be repeated as needed and this is how it is used in a wide range of applications.
In conclusion, the FS450R12KE3BOSA1 is a power module which is used in many different applications and is based on the use of an IGBT. It is used to control and switch current in a wide range of different power applications ranging from automotive to industrial applications. The working principle behind this device is based on the use of an N-channel and a P-channel IGBT which are connected in series.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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