FS6R06VE3B2BOMA1

Series:	--
Part Status:	Not For New Designs
IGBT Type:	--
Configuration:	Full Bridge
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	11A
Power - Max:	40.5W
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 6A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	330pF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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The FS6R06VE3B2BOMA1 is a type of insulated gate bipolar transistor (IGBT) module created by the manufacturer Infineon. IGBTs are used in many different technologies and applications, from solar power and electric cars to medical equipment and home appliances. This module is designed to provide reliable performance in industrial applications where high voltage and/or fast switching is needed. In this article, we will explore the application fields and working principles of the FS6R06VE3B2BOMA1.

The FS6R06VE3B2BOMA1 is an IGBT module designed for industrial applications. It has an operating voltage of 600V, a maximum collector current of 6A, and a maximum turn-off energy of 18mJ. Its isolation voltage is up to 3750V, its gate drive supply voltage is up to 18V, and its gate drive current is up to 7A. This module features over-current protection, over-temperature protection, and reverse-blocking protection. Its maximum junction temperature is approved up to 150°C, which makes it suitable for high-temperature applications.

The FS6R06VE3B2BOMA1 can be used in a wide range of industrial applications where fast switching is needed. It is suitable for motor control, frequency converters, UPS, power electronics, and power supplies. This module is also well suited for automotive and solar applications due to its high voltage and high switching frequency capability. It is designed for robust and reliable performance, making it an ideal choice for many different industrial applications.

The working principle of the FS6R06VE3B2BOMA1 involves the use of an insulated gate bipolar transistor (IGBT) module. An IGBT is a power semiconductor device which combines the characteristics of a MOSFET and bipolar transistor. It is able to handle both high and low voltage levels, making it an ideal choice for many power electronics applications. In an IGBT, a bipolar junction transistor is connected to a P-N-P type structure. A gate driver is then connected to the P-N-P structure which provides the necessary energy to turn the IGBT on and off.

The FS6R06VE3B2BOMA1 IGBT module can be used in a variety of industrial applications where fast switching is needed. It features over-current protection, over-temperature protection, and reverse-blocking protection. Its maximum junction temperature is approved up to 150°C, making it suitable for high-temperature applications. Its operating voltage is 600V and its gate drive supply voltage is up to 18V. The working principle of the FS6R06VE3B2BOMA1 involves the use of an insulated gate bipolar transistor (IGBT) module which combines the characteristics of a MOSFET and bipolar transistor. This module is designed to provide reliable performance in industrial applications where high voltage and/or fast switching is needed.

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