FS900R08A2P2B31BOSA1 Allicdata Electronics
Allicdata Part #:

FS900R08A2P2B31BOSA1-ND

Manufacturer Part#:

FS900R08A2P2B31BOSA1

Price: $ 562.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD HYBRID PACK2 DRIVE HYBRID2-1
More Detail: IGBT Module
DataSheet: FS900R08A2P2B31BOSA1 datasheetFS900R08A2P2B31BOSA1 Datasheet/PDF
Quantity: 1000
3 +: $ 511.21100
Stock 1000Can Ship Immediately
$ 562.34
Specifications
Series: *
Part Status: Active
Description

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Transistors-IGBTs-Modules

The FS900R08A2P2B31BOSA1 module is a particular type of insulated gate-biased transistor (IGBT). This module is used in high-powered, high-frequency applications, typically in automotive, industrial, and aerospace applications, and is capable of high voltage switching.

Application Field

The FS900R08A2P2B31BOSA1 module is typically used in high-powered applications that require fast switching speeds, such as those found in electric drive and renewable energy systems, frequency conversion systems, motion control and robotic systems, lighting systems, and high-frequency inverter applications. It is an ideal choice for the design of power converters and other high-power switching applications.

Working Principle

As an IGBT, the FS900R08A2P2B31BOSA1 module is a type of power transistor module with three pins: a collector, an emitter, and a gate. The collector and emitter pins act as the source and sink for the electrical current, and the gate pin is used to control the flow of current. The IGBT is designed to operate at high voltage, capable of up to 1700V, and can reach high switching frequencies.

When the gate of the IGBT is given an input signal, the current that passes from the collector to the emitter increases. This increased current is what drives the desired application. The module has a power output rating of up to 900W, making it a great choice for high-power applications. When the gate signal is removed, the current decreases, but not all the way to zero, because of the module’s insulated gate-biased structure.

This insulated gate-biased design is the crucial feature of this IGBT module, allowing it to handle higher loads while still allowing the current to remain on. This design also helps reduce losses that can occur at higher power levels. The insulated gate-biased also helps protect against accidental short-circuits.

Advantages

The FS900R08A2P2B31BOSA1 module has several advantages over other power components. It has ultra-high power handling capabilities, with peak current ratings up to 35 Amps and peak power ratings up to 900 Watts. It also has a very high switching frequency, with frequency ratings up to 1500 kHz. The module also has very low losses and a wide range of temperature operating range. Its design also allows for very little power loss through resonance.

The module also features high-voltage capability, with a rated blocking voltage of up to 1700V. This is ideal for applications that require high-voltage operation such as motor drives and electric propulsion systems. Lastly, the module is designed to handle very low gate drive power, reducing the power consumption of the application.

Conclusion

The FS900R08A2P2B31BOSA1 module is a high-powered IGBT module designed for high-voltage, high-frequency applications. It is capable of high-power ratings of up to 900W and a wide range of temperature operation. Its insulated gate-biased design helps reduce losses and protect against accidental shorts. This makes it an ideal choice for power converter and high-power switching applications.

The specific data is subject to PDF, and the above content is for reference

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