Allicdata Part #: | FZ1000R33HE3BPSA1-ND |
Manufacturer Part#: |
FZ1000R33HE3BPSA1 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT IHVB130-3 |
More Detail: | IGBT Module Trench Field Stop Single Switch 3300V ... |
DataSheet: | FZ1000R33HE3BPSA1 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 0.63000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single Switch |
Voltage - Collector Emitter Breakdown (Max): | 3300V |
Current - Collector (Ic) (Max): | 1000A |
Vce(on) (Max) @ Vge, Ic: | 3.1V @ 15V, 100A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 190nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FZ1000R33HE3BPSA1 is a IGBT (Insulated Gate Bipolar Transistor) module. It consists of two power semiconductors connected in series to form an electric bridge. The IGBTs act as two separate semiconductor switches when a current is applied to the gate and allow current to flow through the module. The IGBTs are also capable of conducting very high levels of current while providing extremely low gate loss. The FZ1000R33HE3BPSA1 is designed for applications requiring high efficiency and reliability.
The FZ1000R33HE3BPSA1 is commonly used in applications where high-power transistors are needed. It is ideal for applications ranging from motor drives, power management, solar power inverters, and lighting systems. The module offers low switching losses and improved switching times with short circuit protection. It has a maximum voltage rating of 1000V and a current rating of 33A. The module is also capable of efficiently dissipating up to 35A of power and providing protection from over current.
The working principle of the FZ1000R33HE3BPSA1 is similar to that of other IGBT modules. When no current is applied to the gate, the two power semiconductors behave just like two separate transistors and do not allow any current to flow through the module. When a current is applied to the gate, the two power semiconductors become connected and allow current to flow through the module. This current is transferred from the gate to the collector side and then to the emitter side. This allows the module to efficiently dissipate the current.
The FZ1000R33HE3BPSA1 is highly reliable and is suitable for a variety of applications. It is capable of operating over a wide range of temperatures and provides excellent reliability in harsh and polluted environments. The FZ1000R33HE3BPSA1 is also capable of operating over a wide range of supply voltages, which makes it ideal for applications with limited power supply availability. Additionally, it is capable of providing very low gate losses and offers high-power transistors with low on-state resistance.
The FZ1000R33HE3BPSA1 is an ideal solution for applications requiring high efficiency and reliability. It is an excellent choice for applications such as motor drives, lighting systems, solar power inverters, and power management. The module is also suitable for applications in polluted regions and offers excellent protection from short circuits. Its ability to dissipate up to 35A of power and its low switching losses make the FZ1000R33HE3BPSA1 an excellent choice for power semiconductor module applications.
The specific data is subject to PDF, and the above content is for reference
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