Allicdata Part #: | FZ1500R33HL3BPSA1-ND |
Manufacturer Part#: |
FZ1500R33HL3BPSA1 |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT IHVB190-3 |
More Detail: | IGBT Module Trench Field Stop Full Bridge 3300V 15... |
DataSheet: | FZ1500R33HL3BPSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.26000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 3300V |
Current - Collector (Ic) (Max): | 1500A |
Power - Max: | 17000W |
Vce(on) (Max) @ Vge, Ic: | 2.85V @ 15V, 1500A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 6nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FZ1500R33HL3BPSA1 Application Field and Working Principle
The FZ1500R33HL3BPSA1 is an insulated-gate bipolar transistor (IGBT) module. IGBTs are a type of transistor that combine the low-loss characteristics of bipolar transistors with the high-speed switching capability of field-effect transistors. This module is designed for use in applications such as power supplies, motor control, and motor drive systems.
Introduction
The FZ1500R33HL3BPSA1 is a three-phase IGBT module designed for use in high-power applications such as motor control, motor drive systems, and power supplies. It is constructed using a high-density power substrate with built-in IGBT and integrated driver circuitry. Each IGBT is rated for 1,500V and 33A. The module has a total power rating of 99kW at 1,500V.
Application Field
The FZ1500R33HL3BPSA1 can be used in a wide variety of applications, including motor control, motor drive systems, and power supplies. The module can be used in the following applications:
- AC motor controls, such as switch operates in AC drives
- DC motor drives, such as motor controllers in DC motor drives
- Switched-mode power supplies, such as boosting, bucking, and inverting
- Power electronics, such as high-voltage power converters
- Uninterruptible power supplies, such as high-voltage rectifiers and inverters
Working Principle
The FZ1500R33HL3BPSA1 operates by controlling the flow of electrons across an insulated gate, which is formed by placing a thin insulating layer between a P-type and an N-type semiconductor material. When a voltage is applied to the gate, it creates an electric field that is strong enough to control the flow of electrons from the N-type material to the P-type material. By controlling the amount of current flow, the module can be used to control the speed and torque of a motor or to regulate the voltage of a power supply.
The FZ1500R33HL3BPSA1 has an integrated driver circuitry. The driver circuit monitors the voltage and current flowing through the module and can switch the module on or off as needed. This type of control allows the module to operate with increased efficiency, reduced power consumption, and improved motor control.
Conclusion
The FZ1500R33HL3BPSA1 is an insulated-gate bipolar transistor (IGBT) module designed for use in high-power applications. It has a power rating of 99kW at 1,500V and can be used in a variety of applications, including motor control, motor drive systems, switched-mode power supplies, power electronics, and uninterruptible power supplies. It operates by controlling the flow of electrons across an insulated gate and has an integrated driver circuit for improved efficiency and reduced power consumption.
The specific data is subject to PDF, and the above content is for reference
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