Allicdata Part #: | FZ250R65KE3NPSA1-ND |
Manufacturer Part#: |
FZ250R65KE3NPSA1 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT A-IHV73-6 |
More Detail: | IGBT Module Single 6500V 500A 4800W Chassis Mount... |
DataSheet: | FZ250R65KE3NPSA1 Datasheet/PDF |
Quantity: | 1000 |
4 +: | $ 0.63000 |
Specifications
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 6500V |
Current - Collector (Ic) (Max): | 500A |
Power - Max: | 4800W |
Vce(on) (Max) @ Vge, Ic: | 3.4V @ 15V, 250A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 69nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -50°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Description
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The FZ250R65KE3NPSA1 is an IGBT module typically used in power electronics applications. IGBT stands for insulated-gate bipolar transistor and the FZ250R65KE3NPSA1 is an advanced type of transistor that combines both MOSFET and bipolar junction transistor (BJT) circuitry. It can be used for many applications, most commonly in the field of motor control, power factor correction and power conversion. In power electronics applications, the FZ250R65KE3NPSA1 is an ideal component as it can be quickly and reliably switched, with low conduction losses, high gain and low Vce(sat); all of which contribute to its reliability and suitability for a range of power related applications.
The FZ250R65KE3NPSA1 module consists of two IGBTs rated at 250A per device, with a collector emitter voltage rating of 650V. This device is mounted onto a single monolithic chip, meaning the entire component is one single component, with its own protective shroud. These modules typically come in modules of 4, 6 or 8 IGBTs connected to a single collector, with a common gate source. This makes them suitable for various power applications.
The main working principle of the FZ250R65KE3NPSA1 is to amplify the gate-source voltage. It achieves this by forming two parallel paths between the source and the collector. The voltage in the path through the collector is amplified, while the voltage from the source is left unchanged. This enables the FZ250R65KE3NPSA1 to maintain a high level of efficiency and reliability. In addition, the device is designed for fast switching times, meaning it is ideal for fast response applications.
The main application fields of the FZ250R65KE3NPSA1 include motor control and power factor correction, power conversion and gate drive applications. Motor control applications include the control of DC and AC motors, while Power Factor Correction applications involve controlling the power factor (PF) of a power circuit in order to save energy. Power conversion is another common application, as the FZ250R65KE3NPSA1 is ideal for converting AC to DC power, and vice versa. Finally, the FZ250R65KE3NPSA1 is also used for gate driving applications, such as power modules and driver circuits.
The FZ250R65KE3NPSA1 is an excellent option for applications requiring low power losses and high efficiency. It is an ideal component for applications involving high switching frequency, fast response and reliable performance, making it suitable for a wide range of applications. With its superior capability to amplify gate-source voltage, the FZ250R65KE3NPSA1 is one of the best IGBT modules available for any power related application.
The specific data is subject to PDF, and the above content is for reference
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