Allicdata Part #: | FZ30R07W1E3B31ABOMA1-ND |
Manufacturer Part#: |
FZ30R07W1E3B31ABOMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULES |
More Detail: | IGBT Module |
DataSheet: | FZ30R07W1E3B31ABOMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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Transistors - IGBTs - Modules
The FZ30R07W1E3B31ABOMA1 is a transistors module composed of six isolated insulated-gate bipolar transistors (IGBTs). It is mainly used in applications where low conduction and switching losses, as well as circuit flexibility, are key considerations.The device has a rated operating temperature range of -40 to +150 degrees Celsius, an on-state current of 30 amperes, a device voltage of 560 volts, and a maximum junction temperature of 175 degrees Celsius. In addition, this device has a maximum collector-emitter saturation voltage of 1.5 volts at 45 amperes.The FZ30R07W1E3B31ABOMA1 is mainly used in drive circuits, UPS systems, and solar power inverters. It is also used in medium and high power motor control and in DC/DC converters.The working principle of FZ30R07W1E3B31ABOMA1 is based on the control of the flow of current through an insulated-gate bipolar transistor (IGBT) by applying a voltage on the gate. This IGBT is a four-terminal device consisting of an emitter, collector, and two insulated gates.When the voltage applied to the gate of the IGBT is less than a predetermined value, it is in its off-state and current does not flow through it. On the other hand, when the voltage applied to the gate exceeds the predetermined value, it is in its on-state, and current flows through it.For the FZ30R07W1E3B31ABOMA1, the gate-source voltage must reach a minimum threshold voltage of 6.5 volts in order for the device to be in its active mode. This threshold voltage is maintained even at high temperature, which is a major plus point.The FZ30R07W1E3B31ABOMA1 also has a low conduction and switching losses, which make it a preferred choice of applications where power loss is a major concern. Furthermore, the device also has a low gate charge, which helps reduce the input power requirement. As a result, the device offers a low power consumption and helps reduce overall energy costs.In conclusion, the FZ30R07W1E3B31ABOMA1 transistors module is an ideal choice for applications where flexibility and low power losses are key considerations. It offers an exceptionally wide operating temperature range, low power losses and a low gate charge. It is most suitable for drive circuits, UPS systems, solar inverters, and other medium and high power motor control applications.
The specific data is subject to PDF, and the above content is for reference
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