FZ400R33KL2CB5NOSA1 Allicdata Electronics
Allicdata Part #:

FZ400R33KL2CB5NOSA1-ND

Manufacturer Part#:

FZ400R33KL2CB5NOSA1

Price: $ 0.69
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT MED PWR A-IHV73-6
More Detail: IGBT Module Single 3300V 750A 4900W Chassis Mount...
DataSheet: FZ400R33KL2CB5NOSA1 datasheetFZ400R33KL2CB5NOSA1 Datasheet/PDF
Quantity: 1000
4 +: $ 0.63000
Stock 1000Can Ship Immediately
$ 0.69
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 3300V
Current - Collector (Ic) (Max): 750A
Power - Max: 4900W
Vce(on) (Max) @ Vge, Ic: 3.65V @ 15V, 400A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 48nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FZ400R33KL2CB5NOSA1 module is an important application in the field of transistors and Insulated Gate Bipolar Transistors (IGBTs). This module is a highly efficient and reliable power switching device and is usually used for applications requiring a high switching speed, medium current, and medium voltage.

The FZ400R33KL2CB5NOSA1 module combines the features of an insulated gate bipolar transistor (IGBT) and a Schottky Rectifier Diode, giving it high switching capability, excellent electrical noise immunity, low on-state resistance and high di/dt capabilities. It can be used in a variety of motor control, switching and power delivery applications, making it a great choice for high-speed and high-power applications. Furthermore, due to its smaller size, it can also be used in a variety of smaller, lower power applications.

The working principle of the FZ400R33KL2CB5NOSA1 module is based on the insulated gate bipolar transistor, which is a power semiconductor device commonly used for switching and controlling electrical power. It operates by allowing electric current through the device in either direction, depending on the mode. With the on-state, current flows from the emitter to the collector, allowing for forward current conduction. During the off-state, the voltage applied to the gate controls the current flowing from the collector to the emitter.

The FZ400R33KL2CB5NOSA1 module has an advantage over other IGBTs in that it offers excellent noise immunity, high switching speed and low on-state resistance, which allows for greater current control and efficiency when used in high-speed applications. Additionally, the module has better thermal characteristics than other IGBTs, allowing for less heat loss. It is also capable of handling up to 400 volts of applied voltage.

The FZ400R33KL2CB5NOSA1 module is commonly used in applications such as motor control, power delivery, switching, and frequency converters. It can be used in a variety of applications, from automotive and aerospace to industrial automation and telecom. Additionally, it is frequently used in electric vehicles, home appliances, battery management systems and other high-powered devices.

In conclusion, the FZ400R33KL2CB5NOSA1 module is a practical and efficient power switching device with a variety of uses. It is a great choice for applications requiring high switching speeds, medium currents, and medium voltages. Additionally, it offers low on-state resistance and excellent thermal characteristics, making it well suited for applications where high efficiency is of the utmost importance.

The specific data is subject to PDF, and the above content is for reference

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