Allicdata Part #: | FZ500R65KE3NOSA1-ND |
Manufacturer Part#: |
FZ500R65KE3NOSA1 |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR A-IHV130-6 |
More Detail: | IGBT Module Half Bridge 6500V 1000A 2000000W Chas... |
DataSheet: | FZ500R65KE3NOSA1 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 1.26000 |
Specifications
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 6500V |
Current - Collector (Ic) (Max): | 1000A |
Power - Max: | 2000000W |
Vce(on) (Max) @ Vge, Ic: | 3.4V @ 15V, 500A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 135nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -50°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Description
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The FZ500R65KE3NOSA1 is a IGBT module produced by Infineon Technologies. This module is typically used in power electronics applications and is based on the company’s Insulated Gate Bipolar Transistor (IGBT) technology.The FZ500R65KE3NOSA1 module is rated to work at a voltage of up to 650V and can handle up to 500A of current. It is able to provide very high switching speeds and high efficiency at large current and voltage levels. This makes the module suitable for use in a range of applications, such as dynamic motor drive systems, power conditioning systems and UPS (Uninterruptible Power Supply) systems.The FZ500R65KE3NOSA1 module has a built-in temperature sensor and protective circuits which can protect the module from damage caused by over-current, over-voltage and thermal conditions. These protective circuits can activate when the internal temperature of the module rises above a certain level and shut down the module to prevent any further damage.The working principle of the FZ500R65KE3NOSA1 is based on the concept of an IGBT switch. When a voltage is applied to the gate of the module, the underlying semiconductor material turns on, allowing a current to flow. This current can then be switched off by applying a negative voltage to the gate. This makes it possible to control large currents in a very short time. This is mainly used in motor drives and related power electronics applications.The FZ500R65KE3NOSA1 is an effective IGBT solution for a variety of power electronics applications, due to its high current and voltage ratings, fast switching speed and integrated protective circuits. This makes the FZ500R65KE3NOSA1 an ideal choice for a whole range of powerful and dynamic motor drive applications.
The specific data is subject to PDF, and the above content is for reference
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FZ500R65KE3NOSA1 | Infineon Tec... | 1.39 $ | 1000 | MOD IGBT MED PWR A-IHV130... |
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