Allicdata Part #: | FZ750R65KE3NOSA1-ND |
Manufacturer Part#: |
FZ750R65KE3NOSA1 |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT A-IHV190-6 |
More Detail: | IGBT Module Single 6500V 750A 14500W Chassis Moun... |
DataSheet: | FZ750R65KE3NOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.26000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 6500V |
Current - Collector (Ic) (Max): | 750A |
Power - Max: | 14500W |
Vce(on) (Max) @ Vge, Ic: | 3.4V @ 15V, 750A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 205nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -50°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FZ750R65KE3NOSA1 is an integrated gate-commutated thyristor (IGBT) module designed by Fujitsu. It is a reliable and cost-efficient power device that can be used in various power applications, including renewable energy generation, power supplies, motor drives, inverters, and regenerative braking systems. The FZ750R65KE3NOSA1 also features a wide operating temperature range, up to 125°C. It is designed to reduce power losses due to its low EMI and ESD protection.
The FZ750R65KE3NOSA1 is a three-level inverter module, consisting of an IGBT and an anti-parallel diode. The IGBT is the switch element which is capable of switching high-frequency power. The anti-parallel diode is used for the current recovery from the IGBT. The module also includes built-in protection circuits such as over-current protection and temperature protection.
This module is suitable for many applications where high-frequency switching is required. It can be used for power supplies, motor drives, photovoltaic systems, uninterruptible power supply (UPS) systems, and other sensitive loads. The FZ750R65KE3NOSA1 is also ideal for motor-speed control applications in high-power devices such as three-phasemotors.
The working principle behind the FZ750R65KE3NOSA1 module is based on the concept of gate turn-off. It utilizes a gate-turn-off thyristor (GTO) and an external gate drive circuit to control its operation. When a gate voltage is applied to the GTO, it will switch on and allow current to flow through it. When the gate voltage is reversed, the current will be blocked and the GTO will turn off. This type of switching is the fundamental principle behind the FZ750R65KE3NOSA1 module\'s operation.
The FZ750R65KE3NOSA1 is a highly versatile IGBT module that can be used in a variety of power applications. It is capable of switching high-frequency power with a wide operating temperature range and protection circuits for over-current and temperature. It is ideal for high-power devices such as three-phase motors. The working principle of the module is based on gate turn-off, allowing for reliable and efficient power control.
The specific data is subject to PDF, and the above content is for reference
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