Allicdata Part #: | 853978-ND |
Manufacturer Part#: |
GE28F160C3TD70A |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 16M PARALLEL 46VFBGA |
More Detail: | FLASH - Boot Block Memory IC 16Mb (1M x 16) Parall... |
DataSheet: | GE28F160C3TD70A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - Boot Block |
Memory Size: | 16Mb (1M x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 46-VFBGA |
Supplier Device Package: | 46-VFBGA |
Base Part Number: | 28F160C3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The GE28F160C3TD70A is a flash memory device from the 28F family. It is a type of nonvolatile memory that can be used to store data even when power is turned off. It is suitable for a variety of applications, such as data logging, data security, and boot code. The device has a capacity of 16 megabits (128 megabytes), and is available in a variety of package types. The device is manufactured on a 0.15 micron process, and has a maximum clock speed of 70MHz.
The 28F family of flash memory is widely used due to its low cost and easy programming. The flash memory devices are ideal for situations where data needs to be stored and accessed quickly. The devices can be used in many applications, such as automotive, medical, industrial, and consumer electronics. The primary application fields for the GE28F160C3TD70A are industrial control and datacenter applications.
The main working principle of the GE28F160C3TD70A is based on a floating gate technology, which allows for the retention of an electric charge on the gate even after power is removed from the device. The stored charge is used to control the flow of data within the device. The device is programmed by applying a voltage to the control gate, which causes electrons to flow onto the floating gate, thus erasing the existing data. Data is written to the device by reversing the process and applying a voltage to the drain.
The GE28F160C3TD70A is also designed to be resistant to a variety of environmental conditions. It is rated for a wide temperature range, from -40 degrees Celsius to +85 degrees Celsius. The device is also designed to be resistant to shock, vibration, and ESD (electrostatic discharge). The device is also rated to operate at a maximum humidity of 95%.
The GE28F160C3TD70A is a high-performance and reliable flash memory device, and is suitable for a variety of applications. It is used in a variety of devices, such as automotive systems, industrial control systems, datacenter applications, and consumer electronics. The device is programmed by applying a voltage to the control gate, and is protected from environmental conditions such as temperature, humidity, shock, and ESD.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
GE28F160C3TD70A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16M PARALLEL 46V... |
GE28F320C3BC90 | Intel | -- | 7 | IC FLASH 32M PARALLEL 48V... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...