Allicdata Part #: | GP30KHE3/54-ND |
Manufacturer Part#: |
GP30KHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 3A DO201AD |
More Detail: | Diode Standard 800V 3A Through Hole DO-201AD |
DataSheet: | GP30KHE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 5µs |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | GP30K |
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Diodes are semiconductor devices that allow electricity to flow in one direction only, making them suitable for a variety of applications. The GP30KHE3/54 is a single rectifier diode from NXP that exhibits enhanced performance in both forward and reverse operation. It has an ultra-low forward voltage drop of 0.55V at 3A and a peak reverse voltage rating of 30KV.
The GP30KHE3/54 is designed for use in areas such as industrial automation equipment, lightning protection systems, and solar power systems. It can handle large currents and offers protection from high voltages, making it suitable for a wide range of applications. The diode also has a low thermal resistance of 1.2°C/W and a high surge current rating up to 295A.
The GP30KHE3/54 is available in an S silicone epoxy package with a minimum creepage distance of 18mm. It has an operating temperature range of -40 °C to +125 °C. The device is RoHS compliant and designed to meet the requirements of international quality and safety standards such as UL, EN, and TUV.
The working principle of the GP30KHE3/54 rectifier diode is relatively simple. It consists of an n-type and a p-type semiconductor material joined together to form a junction. When a voltage is applied across the junction, the n-type material becomes negative, while the p-type material becomes positive. This causes charge carriers from the n-type material to travel towards the p-type material and vice versa, forming a diode that only conducts in one direction.
In practice, the GP30KHE3/54 is able to control the flow of direct current by acting like an electronic switch. When a positive voltage is applied to the anode (n-type material), current is allowed to flow from the anode to the cathode (p-type material). Conversely, when a negative voltage is applied, current is not allowed to flow. This allows the diode to be used to protect circuits from high voltages or to regulate current flow.
The GP30KHE3/54 offers a number of advantages compared to traditional rectifiers. In addition to its low forward voltage drop and high surge current rating, the diode also has a low thermal resistance, making it capable of dissipating large amounts of heat without the need for additional cooling. Furthermore, the device is designed to meet the requirements of international safety and quality standards, making it suitable for use in a wide range of applications.
In summary, the GP30KHE3/54 is a single rectifier diode from NXP that offers enhanced performance and high surge current ratings for use in industrial automation equipment, lightning protection systems, and solar power systems. The diode works by forming a junction between an n-type and a p-type semiconductor material that only conducts in one direction. It has a low forward voltage drop and a low thermal resistance, making it capable of dissipating large amounts of heat, and is designed to meet the requirements of international safety and quality standards.
The specific data is subject to PDF, and the above content is for reference
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