GT8G133(TE12L,Q) Discrete Semiconductor Products

Power - Max:	600mW
Supplier Device Package:	8-TSSOP
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Test Condition:	--
Td (on/off) @ 25°C:	1.7µs/2µs
Input Type:	Standard
Switching Energy:	--
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.9V @ 4V, 150A
Current - Collector Pulsed (Icm):	150A
Voltage - Collector Emitter Breakdown (Max):	400V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to GT8G133(TE12L,Q)

The GT8G133(TE12L,Q) is a type of transistor, part of the IGBT (Insulated Gate Bipolar Transistor) family. It has been designed specifically to meet the needs of applications where low on-state voltage, high current density, and the flexibility of a single device can be beneficial. Its distinctive features set it apart from the other IGBTs, making it one of the most popular and advanced transistors available today.

Application Field and Working Principle

The GT8G133(TE12L,Q) is suitable for a variety of applications, such as motor drives, automation systems, home appliances, and lighting systems. Its characteristics make it a perfect choice for motor drives, as it offers low on-state voltage and high current density, allowing efficient control and high speed operation. The flexibility of the transistor also ensures that it can be used in a wide range of applications, from simple DC drives to complex AC drives.The working principle of the GT8G133(TE12L,Q) can be explained by its four terminals, the gate, collector, emitter, and source. When a positive voltage is applied to the gate, the transistor is “turned on”, allowing current to flow between the source and the collector. The same principle applies when the voltage is reversed, the transistor is “turned off”, and the current flow is blocked. This is the essential property of the GT8G133(TE12L,Q), allowing it to be used in different applications.

Advantages and Disadvantages

The GT8G133(TE12L,Q) offers several advantages, such as low on-state voltage, high power density, and high switching speed. It has a low on-state voltage, which allows efficient operation, and a high power density, which provides a high level of energy efficiency. It also has a high switching speed, which helps minimize operating time.The GT8G133(TE12L,Q) also has some drawbacks. It has a relatively large package size, and it operates in a temperature range, which can be problematic in some applications. Additionally, its power dissipation can be high, and it has a low maximum gate voltage.

Conclusion

The GT8G133(TE12L,Q) is an IGBT, or Insulated Gate Bipolar Transistor, that has been specifically designed for applications where low on-state voltage, high current density, and the flexibility of a single device are needed. It is suitable for motor drives, automation systems, home appliances, and lighting systems, and has several advantages, such as low on-state voltage, high power density, and high switching speed. However, it also has some drawbacks, such as its relatively large package size, operating temperature range, and high power dissipation.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description