H11A2S(TB)-V

Output Type:	Transistor with Base
Supplier Device Package:	6-SMD
Package / Case:	6-SMD, Gull Wing
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 110°C
Vce Saturation (Max):	400mV
Current - DC Forward (If) (Max):	60mA
Voltage - Forward (Vf) (Typ):	1.2V
Current - Output / Channel:	--
Voltage - Output (Max):	80V
Series:	--
Input Type:	DC
Rise / Fall Time (Typ):	--
Turn On / Turn Off Time (Typ):	3µs, 3µs
Current Transfer Ratio (Max):	--
Current Transfer Ratio (Min):	20% @ 10mA
Voltage - Isolation:	5000Vrms
Number of Channels:	1
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Optoisolators - Transistor, Photovoltaic Output

The H11A2S(TB)-V is a high performance optoisolator module designed for maximum isolation between input and output circuits. This isolated line-driver module can be used in a wide range of applications including control and data communication systems, electro-mechanical, and monitoring devices. The H11A2S(TB)-V is well-suited for isolated power output circuits, galvanic isolation protection circuits, as well as noise immunity applications.

Overview

The H11A2S(TB)-V optoisolator module is an isolated line-driver module which features a photon sensitive Transistor (FET) output providing up to 250 volts of isolation strength between input and output circuits. The module provides a 5VDC logic input signal to the photon sensitive FET, which in turn turns on the output signal via the internal Transistor. The output signal of the optoisolator is an NPN type, which switches a high side load and can be used for a variety of applications.

Application Fields

The H11A2S(TB)-V optoisolator offers a wide range of applications in the industrial automation sector. It can be used for safety control applications, monitoring devices and galvanic isolation protection circuits. This module is also well-suited for galvanic isolation circuits in the electronic industry, for high-voltage circuits, and for signal conditioning and filtering applications. The module can also be used in signal isolation applications, where a 5VDC logic signal is used to switch a high side load. It can also be used for power isolation circuits, such as for isolating power from a microcontroller.

Working Principle

The H11A2S(TB)-V optoisolator module works by providing a photon sensitive FET output. This output works in tandem with the internal photo sensitive Transistor, providing up to 250 volts of isolation strength between input and output circuits. The given 5VDC logic input signal is converted by the photon sensitive FET to the output signal, which is an NPN type signal which can switch a high side load. The output signal is then isolated from the 5VDC input via the photon sensitive FET providing the isolation between the circuits. The H11A2S(TB)-V module provides a high performance and stable solution when used for power isolation circuits. It offers excellent reliability as it can withstand exposure to extreme temperatures, and is also resistant to EMI and RFI. The module is built with an optimal size, so it can be easily mounted in all kinds of spaces.

Conclusion

The H11A2S(TB)-V optoisolator module is a reliable and cost-effective solution for a wide range of applications. It provides high performance and a stable operation and has been designed to offer maximum isolation between input and output circuits. This module is also resistant to EMI and RFI and can withstand exposure to extreme temperatures. Thus, it is an extremely reliable solution.

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