H495R3BZA

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Through Hole Resistors come in a variety of shapes and sizes, and the H495R3BZA is no exception. Developed by Isabellenhütte, this resistive element is a robust device with a wide operating temperature range. The H495R3BZA features two crimpable copper rods which are welded together, forming a cylindrical case. The resistive element itself, a tantalum nitride film, is applied to the outside of the package, providing a resistance level of up to 33ohm. The device\'s exceptional features make it suitable for a wide range of applications.

The H495R3BZA can be used in a variety of applications ranging from power electronics to automotive design and medical devices. In power electronics, the H495R3BZA is particularly well-suited as a resistor placed in high-current DC circuits. The device\'s low resistance levels can help reduce power consumption, while its wide operating temperature range ensures reliable operation. The device is also resistant to mechanical shock, making it suitable for automotive designs. Additionally, its low power consumption makes it suitable for medical device designs, as the device operates with minimal power consumption.

The working principle behind the H495R3BZA is based on the electrical properties of the tantalum nitride film. As electrons flow through the film, they create a resistive current. This current is dependent on the film\'s electrical properties, such as its thickness and resistivity, and on the voltage applied to the device. The amount of current that flows through the device is proportional to the amount of resistance it exhibits. The H495R3BZA has a resistance range of 0.10 - 33ohm, making it suitable for a wide variety of tasks.

The H495R3BZA is an exceptional resistive element due to its robust design, wide operating temperature range, and low resistance levels. This makes it suitable for a variety of applications, ranging from power electronics and automotive designs to medical devices. Its working principle is based on the electrical properties of the tantalum nitride film, providing reliable performance regardless of the voltage applied to the device.

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