Allicdata Part #: | 1792-265951-ND |
Manufacturer Part#: |
HE30811T1199PA7M |
Price: | $ 73.75 |
Product Category: | Uncategorized |
Manufacturer: | Souriau |
Short Description: | HE308 7C 7#20 PIN |
More Detail: | N/A |
DataSheet: | HE30811T1199PA7M Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 67.05090 |
10 +: | $ 63.10900 |
25 +: | $ 61.13670 |
50 +: | $ 57.19240 |
100 +: | $ 54.03700 |
Specifications
Series: | * |
Part Status: | Active |
Description
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HE30811T1199PA7M is an electronic device which has wide application fields and working principles. It is a field-effect transistor (FET) with two power supply terminals: one is the common anode (gate), while the other is a source (gate). The gate and source both have two P-channel FETs connected in series. The device is designed for radio-frequency (RF) oscillator switching and signal conditioning applications.The two P-channel FETs provide wideband operation with high gain, low input capacitance and low power consumption. The HE30811T1199PA7M is designed to provide maximum flexibility in its design and can be adapted to a variety of applications. This versatility is generated through its unique power electronics structure which includes an advanced voltage-controlled capacity multiplier, linearization techniques and adjustable damping circuits. It can also be used for switching or signal conditioning applications in wireless communication systems, radar systems, medical systems, and automotive applications.The HE30811T1199PA7M is designed to operate within a wide range of voltage and temperature specifications. It is capable of providing over-temperature protection when temperatures exceed the safety threshold. The FET includes a built-in temperature sensor that can help prevent the device from being damaged by high temperatures.The device also provides excellent static and dynamic characteristics such as low insert loss, low junction capacitance, high output isolation and low I-V transfer characteristics. It is also designed to achieve high efficiency and power handling capabilities to meet different power needs.The operating principle of the HE30811T1199PA7M is based on the voltage drive of the two FETs. The voltage applied between the gate and source allows the device to control the current that flows through the FETs. The gate voltage can be used to control the amount of current that flows through the FETs, and thus, the device can be used to control the power delivery to different circuits. The gate and source can also be used to protect against over-voltage and over-current.The HE30811T1199PA7M is an effective and efficient electronic device that has a wide range of applications, from signal conditioning and switching to RF oscillators. It is designed to provide protection against over-temperature and voltage, and to offer high efficiency and power handling capabilities. Its innovative power electronics structure and adjustable damping circuits make it versatile for use in various applications.
The specific data is subject to PDF, and the above content is for reference
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HE30800T1911SA6M | Souriau | 68.2 $ | 19 | HE308 11C 11#16 SKT RECP |
HE30800T1911SB6M | Souriau | 68.2 $ | 19 | HE308 11C 11#16 SKT RECP |
HE30800T1911SB7M | Souriau | 68.2 $ | 18 | HE308 11C 11#16 SKT RECP |
HE30800T1911SD7M | Souriau | 68.2 $ | 17 | HE308 11C 11#16 SKT RECP |
HE30800T1911SA7M | Souriau | 68.2 $ | 12 | HE308 11C 11#16 SKT RECP |
HE30800T1932PA6M | Souriau | 69.27 $ | 19 | HE308 32C 32#20 PIN RECP |
HE30800T1932PB6M | Souriau | 69.27 $ | 19 | HE308 32C 32#20 PIN RECP |
HE30800T1932PB7M | Souriau | 69.27 $ | 18 | HE308 32C 32#20 PIN RECP |
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HE30800T1911PA6M | Souriau | 69.71 $ | 19 | HE308 11C 11#16 PIN RECP |
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