HMC-ALH216-E Allicdata Electronics
Allicdata Part #:

1127-2702-ND

Manufacturer Part#:

HMC-ALH216-E

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC RF AMP LN DIE 1=2PCS
More Detail: RF Amplifier IC General Purpose 14GHz ~ 27GHz Die
DataSheet: HMC-ALH216-E datasheetHMC-ALH216-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Frequency: 14GHz ~ 27GHz
P1dB: 14dBm
Gain: 18dB
Noise Figure: 2.7dB
RF Type: General Purpose
Voltage - Supply: 4V
Current - Supply: 90mA
Test Frequency: 14GHz ~ 27GHz
Package / Case: Die
Supplier Device Package: Die
Base Part Number: HMC
Description

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The HMC-ALH216-E is a RF amplifier used for a variety of communications and broadcast applications as well as automotive and medical contexts. It is designed to increase electrical power and operate at frequencies up to 18GHz. The device consists of six gain stages and a built-in active bias control, allowing amplification of weak signals that can bypass noise generation and distortion.

Application of HMC-ALH216-E

The HMC-ALH216-E is ideal for applications that require high linearity and gain from 0.4GHz to 18GHz. It is a part of a series of packaged amplifiers that are available up to 20GHz, making it a perfect solution for advanced applications in medical electronics, communications, broadcast, automotive, and other related industries. The device has low noise figure of 4.0dB minimal & improved linearity for a better signal-to-noise ratio which is suitable for mobile base station and microwave.

Working Principle of HMC-ALH216-E

The HMC-ALH216-E operates on the principle of increasing electrical power for whatever input signal is applied to the device. It includes six gain stages, allowing for incremental power gain. Additionally, a built-in active bias control is included to control the bias voltage, and an output voltage regulator helps manage thermal dissipation. This ensures that the device can operate even in severe temperature conditions and provide sufficient power.The HMC-ALH216-E also uses Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) technology which has gain frequencies up to 18GHz to further improve this device\'s performance. The device has a high linearity and the wide frequency range make it ideal for applications such as mobile base stations, defense, radar, and other high- power communication needs.

Benefits of HMC-ALH216-E

The HMC-ALH216-E is a power amplifier that can benefit various industries significantly. Its low noise figure (4.0dB typical) makes it highly reliable, and the integrated active bias control enables the device to bypass noise generation and reduce distortion for better signal-to-noise ratio. Its compact size and capability of operating in severe temperature conditions make it a perfect solution for high power communication systems and advanced medical electronics. Additionally, the devices have been tested in multiple locations, including their own factory and an independent laboratory, to ensure the coverage and performance levels meet the required specifications. This device is thus reliable and ideal for commercial applications.

Conclusion

The HMC-ALH216-E is a highly efficient RF amplifier suitable for multiple industries. It is capable of amplifying weak signals while bypassing noise generation, and its integrated active bias control makes it reliable for use in medical electronics, communications, broadcast, automotive and other related industries. The device is highly efficient, occupying small space, and can operate in extreme temperatures. With a low noise figure of 4.0dB typical, and 6 gain stages, the HMC-ALH216-E can provide excellent performance in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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