
Allicdata Part #: | 1127-2709-ND |
Manufacturer Part#: |
HMC-ALH369-SX |
Price: | $ 86.56 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC RF AMP LN DIE |
More Detail: | RF Amplifier IC VSAT, DBS 24GHz ~ 40GHz Die |
DataSheet: | ![]() |
Quantity: | 8 |
2 +: | $ 78.68350 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Frequency: | 24GHz ~ 40GHz |
P1dB: | 11dBm |
Gain: | 20dB |
Noise Figure: | 2dB |
RF Type: | VSAT, DBS |
Voltage - Supply: | 5V |
Current - Supply: | 66mA |
Test Frequency: | 27GHz ~ 37GHz |
Package / Case: | Die |
Supplier Device Package: | Die |
Base Part Number: | HMC |
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Radio frequency (RF) amplifiers are devices which increase the power level of an RF signal. They are fundamental components in most radio systems and widely used in data transmission, broadcasting, and various wireless applications.The HMC-ALH369-SX is a high-performance RF amplifier designed for general-purpose use in a wide range of applications. It is capable of delivering up to an impressive 3W of power over a frequency range spanning from 0.4 GHz to 6 GHz.
The HMC-ALH369-SX comes with a wide range of features which make it ideal for a variety of applications, including microwave test and measurement, broadcast and communications systems, and satellite broadcasting systems. It has a low noise figure of just 0.9 dB at 300 MHz, making it an ideal choice for a range of high-sensitivity applications, such as GPS systems and mobile telephony. The amplifier also has excellent gain flatness and linearity, making it an ideal choice for applications which require high linearity and signal purity.
The HMC-ALH369-SX is a GaN-on-Diamond-based high-linearity amplifier, engineered for both linear and saturated applications with its 1dB compression point of +44dBm. It is designed using advanced GaN technology and is capable of operating even in extreme temperature environments (-40°C to 150°C). It is supplied in a compact, 24-lead 4x4 LGA package, which makes it suitable for use in a wide variety of applications.
The working principle of the HMC-ALH369-SX is quite simple. It uses a standard MOSFET design, with a common gate-to-source voltage of 10V, to enable high power gain. The amplifier has a design which minimizes cross-over distortion and provides excellent gain flatness across the entire frequency band. The amplifier also has low current draw, which makes it highly energy-efficient and ideal for applications where power budget is critical. It also features a wide dynamic range which allows it to provide an exceptionally low noise figure and an extremely linear response.
The HMC-ALH369-SX provides an ideal solution for high-power applications in different fields such as data transmission, laboratory measurements, and communication systems. Its wide frequency range, high power gain, and excellent noise figure allow for a more efficient and reliable communication link in a variety of settings. This makes it a great choice for applications in the military, audio broadcasting, and cellular communication fields. The HMC-ALH369-SX is also a great choice for applications in industrial automation, medical imaging, and environmental monitoring.
In summary, the HMC-ALH369-SX is a high-performance, high-power RF amplifier which is designed for a wide range of applications, including data transmission, broadcasting, and various wireless applications. It has a wide range of features which make it an ideal choice for a variety of applications and its low current draw makes it highly energy-efficient. Furthermore, its wide dynamic range allows it to provide an exceptionally low noise figure and a highly linear response. This makes it an ideal choice for applications in the military, audio broadcasting, and cellular communication fields.
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