HMC-AUH249 Allicdata Electronics
Allicdata Part #:

1127-3320-ND

Manufacturer Part#:

HMC-AUH249

Price: $ 102.86
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC MMIC POWER AMP DIE
More Detail: RF Amplifier IC General Purpose 0Hz ~ 35GHz Die
DataSheet: HMC-AUH249 datasheetHMC-AUH249 Datasheet/PDF
Quantity: 10
10 +: $ 93.51090
Stock 10Can Ship Immediately
$ 102.86
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Frequency: 0Hz ~ 35GHz
P1dB: 21dBm
Gain: 15dB
Noise Figure: --
RF Type: General Purpose
Voltage - Supply: 5V
Current - Supply: 200mA
Test Frequency: 5GHz
Package / Case: Die
Supplier Device Package: Die
Base Part Number: HMC
Description

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RF amplifiers are used to increase the power output of radio waves. These amplifiers are used in a variety of applications, such as radio broadcasting, cellular communication systems, satellite radio, and radar. HMC-AUH249 is a RF amplifier which is specifically designed for defense and aerospace applications. The HMC-AUH249 is a high gain, high power, high linearity, medium power amplifier for operation between 400 MHz and 2.5 GHz. This device provides nominal gain of 40 dB with a maximum gains of 48 dB. It delivers up to 38 dBm saturated output power and up to 37 dBm linear power. This device offers the same high-performance features as other defense and aerospace amplifiers from the same manufacturer, including a very low noise figure of 1.6 dB, class-A operation mode, as well as high linearity and high power efficiency.The HMC-AUH249 is an L-band amplifier, which means that it operates at a band of frequencies ranging from 1 to 2 GHz. This amplifier is ideal for applications such as communication systems, radar systems, satellite communications, broadcast systems, and other tactical systems. The amplifier also has a high linear distortion, which makes it an ideal choice for applications where high fidelity of the signal is required. The working principle of HMC-AUH249 is based on the use of transistors. It uses a pair of NPN and PNP bipolar transistors as the active elements in the amplifier. These transistors are reverse-biased, which allows a large amount of current to flow through them. This current then amplifies the signal and increases its power. The amplifier also utilizes low-noise feedback biasing, which reduces the noise level of the amplifier, while also increasing its linearity. The HMC-AUH249 also employs a suite of other features and capabilities which make it a great choice for demanding applications. It is capable of providing a gain flatness of +/-0.25 dB over its operating bandwidth, and it also has a high input/output return loss of 10 dB. The amplifier can operate at temperatures up to +85°C and is rated for a maximum input power of +20 dBm. Additionally, the device has a robust power supply rejection ratio of 45 dB and is fully ESD protected. In conclusion, the HMC-AUH249 is a high performance medium power RF amplifier specifically designed for defense and aerospace applications. It offers high gain, high linearity, low noise figure, and power efficiency in a small package. The amplifier is also extremely reliable and versatile, making it a great choice for applications ranging from communication systems to radar systems and satellite communications.

The specific data is subject to PDF, and the above content is for reference

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