HMC1099LP5DE RF/IF and RFID |
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Allicdata Part #: | 1127-2867-ND |
Manufacturer Part#: |
HMC1099LP5DE |
Price: | $ 71.95 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC PWR AMP 0.0-1GHZ 12W 32SMD |
More Detail: | RF Amplifier IC Radar 1.1GHz 32-LFCSP (5x5) |
DataSheet: | HMC1099LP5DE Datasheet/PDF |
Quantity: | 80 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
1 +: | $ 65.41290 |
10 +: | $ 62.03930 |
Series: | -- |
Packaging: | Cut Strip |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Frequency: | 1.1GHz |
P1dB: | -- |
Gain: | 20dB |
Noise Figure: | 8dB |
RF Type: | Radar |
Voltage - Supply: | 28V |
Current - Supply: | 100mA |
Test Frequency: | 1.1GHz |
Package / Case: | 32-LFQFN Exposed Pad, CSP |
Supplier Device Package: | 32-LFCSP (5x5) |
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HMC1099LP5DE is a high-performance RF amplifier that allows users to take advantage of its efficient performance and versatility. It consists of two matched JFET channels, enabling a wide range of gain control and high gain linearity. Its ultra-low noise performance, low distortion and wide dynamic range make it ideal for applications that require RF amplification.
The HMC1099LP5DE is part of a class of amplifiers known as RF amplifiers. These amplifiers are designed to boost and increase signal strength at specific frequencies. RF amplifiers use a variety of technologies such as Field Effect Transistors (FETs), vacuum tubes, metal oxide semiconductors (MOSFETs), and other components depending on the application.
The HMC1099LP5DE is a dual-channel monolithic amplifier that operates from DC to 2.6GHz. It features a gain range of up to 32dB and is well suited for antenna and receiver applications. The device also has a low power consumption of 47mA and can be powered from a 5V supply. Additionally, it is provided in a 5-pin SOT-143 package.
The working principle of the HMC1099LP5DE is based on the signal amplification through the two transistors matched by JFET technology. The transistors are operated in the common source configuration and feature gate, drain and source connections. The signal that needs to be amplified is applied to the signal input, then passes through the two transistors where the FETs’ gate currents are modulated. This results in the amplified output signal being produced at the drain of the first transistor.
The HMC1099LP5DE has various applications in both wireless and telecom sectors. It can be effectively used in antenna amplifiers, PA pre-driver amplifiers, cable faders, receiver front-ends, and feedback amplifiers. Moreover, it can be used in cellular radio links, base station applications, automotive devices and various other RF applications which require high gain and low noise performance.
In summary, the HMC1099LP5DE is a high-performance, efficient RF amplifier which is intended for applications that require a wide range of gain control and high gain linearity with low power consumption. It is suitable for high-frequency, antenna and receiver applications, and can be used in a variety of cellular radio links, base station applications and automotive devices. This RF amplifier is part of a class of amplifiers that boost signal strength and operates using FET transistors, vacuum tubes and metal oxide semiconductors.
The specific data is subject to PDF, and the above content is for reference
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