
Allicdata Part #: | 1127-2929-ND |
Manufacturer Part#: |
HMC311LP3E |
Price: | $ 6.76 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC GAIN BLOCK AMP 16SMD |
More Detail: | RF Amplifier IC General Purpose 0Hz ~ 6GHz 16-SMT ... |
DataSheet: | ![]() |
Quantity: | 83 |
1 +: | $ 6.75990 |
10 +: | $ 6.55710 |
100 +: | $ 6.42191 |
1000 +: | $ 6.28671 |
10000 +: | $ 6.08391 |
Series: | -- |
Packaging: | Cut Strip |
Part Status: | Active |
Frequency: | 0Hz ~ 6GHz |
P1dB: | 13dBm |
Gain: | 14dB |
Noise Figure: | 4.5dB |
RF Type: | General Purpose |
Voltage - Supply: | 5V |
Current - Supply: | 74mA |
Test Frequency: | -- |
Package / Case: | 16-VFQFN Exposed Pad |
Supplier Device Package: | 16-SMT (3x3) |
Base Part Number: | HMC311 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF amplifiers are important components in many electronic circuits, and the HMC311LP3E is one of the most versatile. This RF amplifier is available in packages with either a die attach or a surface mount, allowing for remote mounting and board level design respectively. It is also fully matched to 50 ohm systems, integrating a differential circuit and two off-chip components in the package. The HMC311LP3E is a wideband DC-3GHz amplifier, optimized for a variety of applications. It can be used in wireless infrastructure and other communication systems, supporting receive and transmit for base stations. This amplifier is also suitable for any application that requires wideband gain and low noise performance. Additionally, the “Fairchild advanced design” ensures the amplifier’s high gain and wideband characteristics, allowing for ultra linear operation up to 2000 MHz.To understand the working principle of the HMC311LP3E, it is important to look at the internal structure. This amplifier has two amplifying stages, one differential input stage and one common-source output stage. The differential input stage utilizes the RF signal to drive the gate of an N-type MOSFET and the current is transferred to the conduction path of the P-type MOSFET. The common-source output stage consists of two cascoded N-type MOSFETs. This allows the amplifier to provide high gain and frequency response while maintaining high linearity, making it suitable for applications up to 2000MHz. In addition, the high power output and low noise figure of the HMC311LP3E make it suitable for a variety of low power applications. The amplifier is a 50 ohm matched device, allowing for a well balanced signal transfer from the source to the output. It also offers an adjustable supply voltage, DC bias, and connection for external capacitors to optimize the performance. The HMC311LP3E is a versatile RF amplifier and it is widely used in a range of applications. Its high gain and wideband characteristics, combined with low noise figure, make it suitable for many different communication systems, allowing for optimal signal transfer in applications up to 2000 MHz.
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