HMC334LP4ETR RF/IF and RFID |
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| Allicdata Part #: | 1127-1336-2-ND |
| Manufacturer Part#: |
HMC334LP4ETR |
| Price: | $ 0.00 |
| Product Category: | RF/IF and RFID |
| Manufacturer: | Analog Devices Inc. |
| Short Description: | IC DOWNCONVERTER SIGE WB 24-QFN |
| More Detail: | RF IC Downconverter LTE, WiMax 600MHz ~ 2.7GHz 24... |
| DataSheet: | HMC334LP4ETR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Function: | Downconverter |
| Frequency: | 600MHz ~ 2.7GHz |
| RF Type: | LTE, WiMax |
| Secondary Attributes: | -- |
| Package / Case: | 24-VFQFN Exposed Pad |
| Supplier Device Package: | 24-QFN (4x4) |
| Base Part Number: | HMC334 |
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The HMC334LP4ETR is a part of the Hybrid Microcircuits Corporation\'s wide variety of RF misc ICs and modules, specifically designed for Ultra-Low Power. It is a highly integrated IC with all of the features found in traditional semiconductor products such as a linear power amplifier, active bias circuit and input/output matching circuitry, with the addition of low power operation. This makes it an ideal choice for various applications from short range RF communication to ultra low power wireless sensing nodes.
In addition to providing a high degree of integration, the HMC334LP4ETR has been designed to provide superior performance in a simple, easy to use package. The amplifier utilizes an active bias circuit to maintain a high level of efficiency over a range of input and output power levels. It is also designed to provide a wide range of gains with low-noise characteristics. To further improve efficiency, the input and output matching circuitry is designed to minimize losses associated with signal reflection and signal masking.
The HMC334LP4ETR is a GaAs MESFET enhanced with a high linearity active bias circuit. It is a single stage, Class AB amplifier, with a 3dB bandwidth ranging from 8MHz to 4GHz. The linear power amplifier operates with a supply voltage of 2.7V to 6V and provides a maximum output power of 23.5 dBm. The active bias circuit helps to maintain the amplifier\'s high linearity. It also features integrated power amplifier protection circuitry that helps to protect the amplifier from over-current, over-voltage and overtemperature conditions.
The HMC334LP4ETR is well suited for applications that require low-power operation in an ultra-compact form factor. It is a popular choice for applications ranging from 802.11 + Bluetooth ultra-low power nodes to Zigbee, ISM and IEEE 802.15.4 point-to-point transceivers. It is also used in a variety of battery powered applications such as personal healthcare devices, smart energy, home automation, etc.
In conclusion, the HMC334LP4ETR is an ideal choice for applications where ultra-high integration and low-power consumption are required. By combining superior linearity and high efficiency, the HMC334LP4ETR is able to deliver superior performance in a wide range of applications. Its small form factor also makes it a good candidate for applications that are limited on board space.
The specific data is subject to PDF, and the above content is for reference
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HMC334LP4ETR Datasheet/PDF