HMC345LP3E

Test Frequency:	8GHz
Base Part Number:	HMC345
Supplier Device Package:	16-SMT (3x3)
Package / Case:	16-VFQFN Exposed Pad
Operating Temperature:	-40°C ~ 85°C
Voltage - Supply:	5V
Impedance:	50 Ohm, 75 Ohm
Features:	--
IIP3:	45dBm
P1dB:	21dBm
Series:	--
Insertion Loss:	2.4dB
Isolation:	32dB
Frequency Range:	DC ~ 8GHz
Circuit:	SP4T
Topology:	Absorptive
RF Type:	General Purpose
Part Status:	Obsolete
Packaging:	Cut Strip

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RF Switches

RF Switches are components of radio frequency circuits, whose purpose is to select some or all of the available signal paths in an RF system. They are used in wide variety of applications, including telecommunications, broadcasting, military, and aerospace. The main types of RF switches are PIN diode switches, solid-state switches, SPST switches, SPDT switches, and analog switches. In this article, we will focus on examining the application field and working principle of the HMC345LP3E RF Switch.

Application Field of the HMC345LP3E

The HMC345LP3E is a high power, high isolation RF switch designed to support applications over the wireless infrastructure frequency range from 700 MHz to 2700 MHz. It is ideal for modems, base stations, defense systems, and automotive navigation systems. This switch is constructed using a low loss and high isolation SiGe process, and features a low insertion loss of 0.9 dB and a high isolation of more than 28 dB.Furthermore, the device has an excellent input IP3 performance of 44 dBm, making it excellent for signal switching and routing in baseband applications. Additionally, the low thermal resistance and durable construction make it suitable for long-term, reliable operation and for use in harsh environments.

Working Principle of the switch

The working principle of the HMC345LP3E RF Switch is based on the PIN diode switch architecture, which is used to achieve low loss and high linearity. The RF signal is applied to the RF input pad, and the PIN diode is connected to the two control pads to enable the RF signal to be switched from the output port to either the input port or to an alternative port.The PIN diode acts like a variable resistor, allowing for a low loss signal switching when the diode is forward biased and high isolation when it is reverse biased. The control voltage applied to the control pads determines the bias of the PIN diode, which in turn determines the switching state of the RF signal. The RF signal can be switched to the alternative port upon the application of a negative voltage of -7V to the control pads.

Final Thoughts

The HMC345LP3E RF switch is a high power, high isolation device built using a low loss and high linearity SiGe process. With its excellent input IP3 performance, low insertion loss, and high isolation, it is suitable for both baseband and wireless applications. By applying a certain voltage to the control pads, the RF signal can be switched from the output port to either the input port or an alternative port. With its durable construction and low thermal resistance, it is suited for long-term, reliable operation in harsh environments.

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