HMC405-SX

Series:	--
Packaging:	Tray
Part Status:	Active
Frequency:	0Hz ~ 10GHz
P1dB:	13dBm
Gain:	15dB
Noise Figure:	4.5dB
RF Type:	VSAT
Voltage - Supply:	5V
Current - Supply:	50mA
Test Frequency:	3GHz ~ 7GHz
Package / Case:	Die
Supplier Device Package:	Die
Base Part Number:	HMC405

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RF Amplifiers

The HMC405-SX is a silicon monolithic integrated circuit designed to operate in the linear and class A across the microwaves spectrum. It provides excellent linearity and high gain in a compact package, making it ideal for applications such as point-to-point microwave communications, RF front-ends, receivers, transmitters, repeaters, distributed antenna systems and beamforming networks. Its low noise figure, wide bandwidth and high linearity make it an ideal choice for a variety of high-performance RF amplification applications.

The HMC405-SX is a high-performance, wideband GaAs FET amplifier device. It consists of two N-channel enhancement-mode pseudomorphic High Electron Mobility Transistor (HEMT) active stages, mounted in between a source and a drain. The device operates with an integrated power supply voltage of 7 volts and a quiescent current of 45 milliamps. An onboard bias network ensures optimal biasing conditions, allowing the amplifier to achieve its full potential. The nominal gain of the device is 28 dB, and it exhibits a maximum output power of 11 dBm.

The HMC405-SX provides superior linearity performance, making it suitable for both linear and Class A- type signal amplification applications. Its low noise figure and wide frequency range make it well-suited for front-end, receiver, and transmitter applications requiring low noise and high dynamic range capabilities. Its high input and output return losses make it an ideal choice for applications that require minimal power dissipation, such as distributed antenna systems and beamforming networks.

The HMC405-SX operates at frequencies between 0.8 GHz and 8 GHz, with an input compression level of up to +19 dBm. Its small footprint and integrated bias network makes it ideal for high performance, high power integrated circuits. The device is designed using high quality, gold-doped, semiconductor materials, allowing it to achieve superior reliability and exceptional quality.

In conclusion, the HMC405-SX is an effective, high performance silicon monolithic integrated circuit designed to operate in the linear and class A across the microwave spectrum. Its low noise figure, wide bandwidth and high linearity make it the ideal choice for a variety of high-performance RF amplification applications. Its small footprint and integrated bias network make it suitable for high performance, high power integrated circuits.

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