HMC406MS8GETR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Frequency:	5GHz ~ 6GHz
P1dB:	27dBm
Gain:	17dB
Noise Figure:	6dB
RF Type:	WiMax, WLAN
Voltage - Supply:	5V
Current - Supply:	300mA
Test Frequency:	5.8GHz
Package / Case:	8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package:	8-MSOP-EP
Base Part Number:	HMC406

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Introduction to HMC406MS8GETR RF Amplifiers

HMC406MS8GETR is a type of RF amplifier used in a variety of applications including wireless communication, radar systems, medical equipment, and more. The device is provided in a 3mm x 5mm leadless surface-mount package and provides excellent system compatibility. It is designed to provide low power consumption and high gain while providing low noise figure and high linearity.

Application Fields

HMC406MS8GETR RF amplifiers are widely used in a variety of applications including cellular systems, WiFi/ISM bands, point-to-point radio systems, satellite receivers, and medical equipment. It can be used to amplify signals in the frequency range of 400MHz to 4GHz. This wide frequency range makes it ideal for use in modern wireless communication solutions such as 3G/4G cellular systems, WLAN systems, GPS receivers, and more. It can also be used to boost signal strength in mobile devices such as cell phones and tablets. In medical applications, the HMC406MS8GETR can be used for the amplification of electrocardiogram (ECG) signals. It is also used in imaging systems such as magnetic resonance imaging (MRI) and computed tomography (CT)-scanning equipment. The device can also be used to amplify signals in medical ultrasound systems.

Working Principle

HMC406MS8GETR amplifiers belong to the class of RF amplifiers that use transistor technology. Specifically, the device is a silicon monolithic microwave integrated circuit (SiMMIC). It is based on two transistors commonly known as gallium arsenide (GaAs) high electron mobility transistors (HEMTs). The device is usually powered by 3.3 Volts DC. It has a maximum operating power supply of 5.25 Volts and a maximum operating temperature of +85°C. The device has a high linearity gain of 28dB with very low noise figures and high input/output Return Loss. It can provide up to 22dB gain and 500mW of output power.

Conclusion

In conclusion, the HMC406MS8GETR RF amplifier can be used in a variety of application fields such as wireless communication, radar systems, medical equipment, and more. It uses two transistors based on gallium arsenide technology and provides high linearity gain with low noise figures and high input/output Return Loss. It is suitable for operation in the frequency range of 400MHz to 4GHz, making it ideal for use in modern wireless communication systems.

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