
Allicdata Part #: | HMC452ST89-ND |
Manufacturer Part#: |
HMC452ST89 |
Price: | $ 10.68 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC MMIC AMP HBT 1W SOT-89 |
More Detail: | RF Amplifier IC General Purpose 400MHz ~ 2.2GHz SO... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 10.68000 |
10 +: | $ 10.35960 |
100 +: | $ 10.14600 |
1000 +: | $ 9.93240 |
10000 +: | $ 9.61200 |
Series: | -- |
Packaging: | Cut Strip |
Part Status: | Active |
Frequency: | 400MHz ~ 2.2GHz |
P1dB: | 31.5dBm |
Gain: | 9dB |
Noise Figure: | 6.5dB |
RF Type: | General Purpose |
Voltage - Supply: | 5V |
Current - Supply: | 510mA |
Test Frequency: | 2.1GHz |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89 |
Base Part Number: | HMC452 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HMC452ST89 amplifier is a part of the family of RF Amplifiers, designed for a wide range of RF applications. This highly integrated amplifier is capable of providing the highest level of gain, linearity and dynamic range in a small package. It has a two-stage design, combining both GainIP and GaN technology to achieve its exceptional performance.
The main application of the HMC452ST89 is for amplitude modulation communication links. This amplifier is ideal for use in high-reliability radios, amplifying high-frequency signals for short-range Base Station solutions. As a result, it can be used to deliver ultra-wide-band-to-narrow-band operation for any of today’s telecom applications, such as cellular base station transceivers, point-to-point radio links, VHF/UHF radios, and satellite communications.
In terms of working principle, the HMC452ST89 utilizes a first-stage GainIP cell followed by a GaN power amplifier cell. The GainIP cell is designed to supply sufficient gain to drive high-frequency signals over long distances. This amplifier further allows for extremely low-noise operations, a wideband frequency response, high input power, and an improved signal-to-noise ratio.
In the second stage, the HMC452ST89 includes a GaN power amplifier cell, which is responsible for the amplification of the signal. This GaN technology utilizes distributed active gate devices that provide a higher gain over traditional transistors, allowing for a reduced system size and greater power efficiency. The result is a device that has wide bandwidth capability and improved linearity with a low total harmonic distortion.
In conclusion, the HMC452ST89 amplifier is an excellent choice for high-frequency communications. Its combination of low-noise, wideband frequency response, and efficient power output make it ideal for use in applications such as Base Station solutions, point-to-point radio links, VHF/UHF radios, and satellite communications. Additionally, its ultra-small size and low power consumption make it well-suited for use in portable and mobile communications devices.
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