HMC453ST89 Allicdata Electronics
Allicdata Part #:

HMC453ST89-ND

Manufacturer Part#:

HMC453ST89

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC MMIC AMP HBT 1.6W SOT-89
More Detail: RF Amplifier IC General Purpose 400MHz ~ 2.2GHz SO...
DataSheet: HMC453ST89 datasheetHMC453ST89 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Strip
Part Status: Obsolete
Frequency: 400MHz ~ 2.2GHz
P1dB: 32.5dBm
Gain: 7.5dB
Noise Figure: 6.5dB
RF Type: General Purpose
Voltage - Supply: 5V
Current - Supply: 725mA
Test Frequency: 2.11GHz
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Base Part Number: HMC453
Description

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The HMC453ST89 is a RF amplifier that is specifically used for applications in the cellular, broadcast, and land mobile radio frequency (RF) markets. It is a high power, low noise, and high linearity GaN transistor, which can act as an amplifier for both transmit and receive applications. Additionally, the transistor can also be used for high power switching applications in base stations and mobile infrastructure.

The HMC453ST89 includes two separate amplifier circuits. The first is a high power amplifier, which is used to boost the signal. This amplifier is designed to be broadband and operate over a large frequency range, ensuring that the device remains stable and performs consistently when running multiple applications. The second amplifier is the high linearity amplifier, which is used to improve the linearity of the amplified signal. It is designed to minimize distortions and other nonlinear effects that can be caused by high power operation.

The HMC453ST89 is one of the most efficient GaN transistors on the market. It has a higher power density than other transistors, which means it can provide significantly more power output than other options. Additionally, the transistor has an outstanding linearity performance, ensuring that it can provide a powerful signal that is free of distortions and other nonlinear effects.

The working principle behind the HMC453ST89 is that it takes a small high frequency input signal and boosts it to a high power output. This input signal is first amplified by the high power amplifier, which is designed to be broadband. It then passes through the high linearity amplifier, which is designed to minimize distortions and other nonlinear effects. The final output signal is then amplified further by the power amplifier, resulting in a much higher power output.

The HMC453ST89 is a reliable and robust device that is suitable for use in many different applications. It can be used in base station and mobile infrastructure applications for high power switching. Additionally, it can be used in transmit and receive applications in the broadcast, cellular, and land mobile radio frequency markets. The transistor is also designed to be highly efficient, meaning that it can provide significantly more power output than other options.

The specific data is subject to PDF, and the above content is for reference

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