HMC479MP86E

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RF Amplifiers are used for a variety of applications, but their main purpose is to increase the power of a signal. The HMC479MP86E is a high power amplifier that is optimized for use in applications requiring high linearity and high power efficiency. This amplifier is capable of delivering up to 38dBm of output power and can operate from 0 to 10GHz.

The HMC479MP86E is a surface-mountable, four-stage GaAs MMIC power amplifier. It is designed to provide high efficiency, high linearity and good gain flatness across a wide frequency range. The amplifier features an integrated input match, output match, and bias circuitry, which allows the device to be used in a wide range of applications. This amplifier offers excellent performance over its entire frequency range, making it suitable for applications such as microwave point-to-point links, instrumentation, and base-station transmitter systems.

The HMC479MP86E operates in a frequency band from 0 to 10GHz, and provides a maximum output power of 38dBm. The amplifier has a gain of 45dB, a power-added efficiency of 25%, and a noise figure of 6.5dB. Additionally, the device features a dynamic range of 80dB, which is suitable for all types of base-station applications. The device is manufactured using GaAs pHEMT process technology and comes with an integrated E-HEMT design.

The HMC479MP86E utilizes an amplifier circuit consisting of four stages, each operating in its own independent frequency band. The first stage features a gain of 24dB and a noise figure of 7dB. The second stage has a gain of 4.5dB and a noise figure of 8.5dB. The third stage offers a gain of 14dB and a low noise figure of 2.5dB. Finally, the fourth stage has a gain of 3dB and a noise figure of 1dB. The output of the amplifier is matched to 50 ohms and provides a high output power level.

The working principle of the HMC479MP86E is based on the concept of positive feedback applied to the voltage input. The voltage input generates an electric field that travels through the device biased by the gate voltages which control the gain and noise characteristics of the device. This electric field is further amplified by the positive feedback, resulting in an output voltage that is proportional to the input. This process allows for amplification of the input signal, making it suitable for a variety of applications requiring high linearity and high power efficiency.

The HMC479MP86E amplifier is suitable for a variety of applications requiring high linearity and high power efficiency. These applications include microwave point-to-point links, instrumentation, base-station transmitters, and FM transmitters. The amplifier can also be used in cruise missile guidance systems, high power amplifier arrays, and satellite communication systems. Additionally, the device can be used in military high-altitude applications, such as mobile satellite communications.

In conclusion, the HMC479MP86E is a versatile and powerful amplifier designed to operate in a variety of applications from 0 to 10GHz. It offers excellent linearity, high power efficiency, and excellent gain stability across its entire frequency range, making it suitable for a variety of applications requiring high linearity and high power efficiency. The integrated input and output match network, as well as the integrated bias circuit, makes the device easy to use and reduces design complexity. Additionally, the device is manufactured using GaAs pHEMT process technology and features an integrated E-HEMT design.

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