HMC480ST89

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HMC480ST89 is a high power RF amplifier, designed for applications such as satellite transponders, base stations, and wireless communication systems. It is a GaN-based power amplifier with a maximum output power of 24 dBm. The amplifier offers very low noise figure, high efficiency, and wide bandwidth. It is suitable for point-to-point and point-to-multi-point communication systems, as well as for multi-carrier applications.

The main features of HMC480ST89 are high linearity, which is important for applications such as Direct Sequence Spread Spectrum (DSSS) and Frequency Hopping Spread Spectrum (FHSS) communication, low output noise, wide dynamic range, high gain, and low power consumption. The amplifier\'s output power can be easily adjusted using the variable gain amplification (VGA) feature.

The working principle behind the HMC480ST89 is based on the combination of a N-channel enhancement-mode field-effect transistor (NMOS), an RF line driver, and a passive components. The NMOS is the main component, which provides the amplification, while the RF line driver is used to drive the external amplifier stages in the system. The passive components provide impedance matching and low-noise noise-shaping.

To ensure high performance, the amplifier relies on a variety of technologies, including the MOSFETs having a lower on-resistance figure, variable gain amplification (VGA) circuitry, and impedance matching. This helps to maintain linearity and dynamic range.

HMC480ST89 has significant advantages in terms of power efficiency and low power consumption compared to some conventional amplifier designs. In addition, it can operate over a wide range of temperatures and exhibit great stability. The high RF power and the high gain of this amplifier make it an ideal choice for a range of wireless communication system applications such as base stations and satellite transponders.

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