HMC5445LS6 Allicdata Electronics
Allicdata Part #:

1127-3089-ND

Manufacturer Part#:

HMC5445LS6

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: POWER AMP 24-29.5GHZ INGAP
More Detail: RF Amplifier IC VSAT, DBS 24GHz ~ 27GHz 16-SMT (6x...
DataSheet: HMC5445LS6 datasheetHMC5445LS6 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Cut Strip
Part Status: Obsolete
Frequency: 24GHz ~ 27GHz
P1dB: 30.5dBm
Gain: 26dB
Noise Figure: --
RF Type: VSAT, DBS
Voltage - Supply: 6V
Current - Supply: 750mA
Test Frequency: 24GHz ~ 27GHz
Package / Case: 16-TFQFN Exposed Pad
Supplier Device Package: 16-SMT (6x6)
Base Part Number: HMC544
Description

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The HMC5445LS6 is a GaAs pHEMT distributed amplifier designed for use in a wide range of applications, particularly RF and microwave amplifiers. The product is available in a wide range of die sizes and packages, and offers superior performance even at very low frequencies. The amplifier is designed to provide excellent gain, output power, dynamic range, and frequency response characteristics.

The HMC5445LS6 is a class A amplifier that has a typical gain of 40dB and an output power of +35 dBm across a frequency range of DC to 6GHz. It has a low noise figure of typically 0.84 dB, making it suitable for applications requiring extremely low noise amplifiers. The amplifier also has a low power consumption of only 4.5 mA, and is capable of handling up to 30mA of current.

The device is well suited for a wide range of applications, including wireless systems, mobile antennas, satellite communications, and test and measurement applications. It is particularly useful in systems requiring high power and wide bandwidths. The amplifier can also be used in applications requiring good frequency stability, as it has a low impedance of only 2.3 ohms.

The HMC5445LS6 uses a distributed architecture to provide high power and gain. This architecture allows the amplifying elements in the device to be distributed across a large area, resulting in an increased gain of up to 40 dB in some cases. The distributed architecture also minimizes the effects of parasitics on the amplifier\'s performance, resulting in better power and linearity characteristics.

The amplifier\'s gain is controlled by two differential input stages, each made up of three transistors. The first stage provides the input matching and gain control, and the second stage provides stability and linearization. The device has excellent input and output matching characteristics, which allow it to have a high gain and a low noise figure.

The amplifier also has a dynamic range of 70dB and a compression point of only -10dBm, meaning it is capable of producing very low distortion levels. Additionally, it has an exceptionally flat frequency response which allows it to produce a wide bandwidth.

Overall, the HMC5445LS6 is a highly reliable amplifier with excellent performance characteristics. It is particularly well suited for applications requiring high power and wide bandwidths, as well as low noise and distortion levels. The amplifier is well suited for a wide range of RF and microwave applications, and is a popular and cost-effective choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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