HMC593LP3ETR RF/IF and RFID |
|
| Allicdata Part #: | 1127-1471-2-ND |
| Manufacturer Part#: |
HMC593LP3ETR |
| Price: | $ 0.00 |
| Product Category: | RF/IF and RFID |
| Manufacturer: | Analog Devices Inc. |
| Short Description: | IC MMIC AMLP LNA BYPASS 16-QFN |
| More Detail: | RF Amplifier IC WiMAX / WiBro 3.3GHz ~ 3.8GHz |
| DataSheet: |  HMC593LP3ETR Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Frequency: | 3.3GHz ~ 3.8GHz |
| P1dB: | 16dBm |
| Gain: | 19dB |
| Noise Figure: | 1.2dB ~ 1.4dB |
| RF Type: | WiMAX / WiBro |
| Voltage - Supply: | 3V, 5V |
| Current - Supply: | 20mA ~ 40mA |
| Test Frequency: | -- |
| Package / Case: | 16-VFQFN Exposed Pad |
| Supplier Device Package: | -- |
| Base Part Number: | HMC593 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF amplifiers play an important role in a variety of applications, including television, broadcast, and satellite system. HMC593LP3ETR is an ultra-wideband (UWB) RF amplifier which is designed as a continuous wave (CW) solution providing 10GHz to 18GHz of operation with over 30dB linear gain. It is a perfect solution for applications requiring broad frequency coverage, high gain, and low noise figure.
The HMC593LP3ETR features an ultra-low noise figure in an n-channel GaAs pseudomorphic HEMT process with exceptional linearity. It provides a single stage of gain, supporting high efficiency and low current consumption. The combination of wide frequency coverage and high linearity makes this part ideal for use in direct broadcast satellite (DBS) and UWB communications systems, as well as other wideband applications.
The HMC593LP3ETR is a fully integrated high performance amplifier with a unique combination of features, including a low noise figure of less than 1.3 dB, and up to 30dB of linear gain. It is also designed to handle high power input levels to deliver stable gain and excellent linearity even in the presence of strong out of band signals. This makes it ideal for heterodyne receivers, base station upconverters, and other linear amplifiers.
The HMC593LP3ETR is based on the use of an integrated MOSFET active device for high linearity. It works with DC supply voltages from 5V to 10V and draws a low input current of only 5mA. The part also features a minimum noise figure of 1.3 dB and a gain of over 30dB across its wide frequency range of 10GHz to 18GHz.
The HMC593LP3ETR is also designed for use in high linearity applications such as direct broadcast satellite systems and UWB radios. This is accomplished through the use of high linearity transistors, which are capable of producing excellent third order intermodulation distortion (IMD) performance and high compression points. The part also features a low-noise figure of less than 1.3dB, excellent isolation, and high stability.
In addition, the HMC593LP3ETR is designed to provide wide dynamic range and high linearity over its wide frequency range. It also features excellent power handling and high gain flatness, which makes it well suited for use in a variety of high power linear amplifier applications.
The HMC593LP3ETR is part of the award-winning HMC amplified product portfolio, which offers low cost solutions for systems requiring high linearity, ultra wide bandwidth, and low noise. This particular RF amplifier is suitable for applications requiring broad frequency coverage, high gain, and low noise figure, such as direct broadcast satellite and UWB radios. With its ultra-wideband performance, high linearity, and low noise figure, it is an excellent choice for those seeking high performance in a range of applications.
The specific data is subject to PDF, and the above content is for reference
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